Enhanced photovoltaic performance of solution-processed Sb2Se3 thin film solar cells by optimizing device structure

Taifeng Ju; Bonkee Koo; Jea Woong Jo; Min Jae Ko

doi:10.1016/j.cap.2019.11.018

Enhanced photovoltaic performance of solution-processed Sb₂Se₃ thin film solar cells by optimizing device structure

Taifeng Ju
, Bonkee Koo
, Jea Woong Jo
, Min Jae Ko

Department of Energy and Materials Engineering

Hanyang University

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Thin-film solar cells have attracted worldwide attention due to their high efficiency and low cost. Antimony selenide (Sb₂Se₃) is a promising light absorption material candidate for thin-film solar cells due to its suitable band gap, abundance, low toxicity, and high chemical stability. Herein, we fabricate an Sb₂Se₃ thin film solar cell using a simple hydrazine solution process. By controlling the thickness of the photoactive layer and inserting a poly(3-hexylthiophene) hole-transporting layer, an Sb₂Se₃ solar cell with a power conversion efficiency of 2.45% was achieved.

Original language	English
Pages (from-to)	282-287
Number of pages	6
Journal	Current Applied Physics
Volume	20
Issue number	2
DOIs	https://doi.org/10.1016/j.cap.2019.11.018
State	Published - Feb 2020

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Antimony selenide
Hole-transporting layer
n-i-p structure
poly(3-hexylthiophene)
Solution process
Thin film solar cell

Access to Document

10.1016/j.cap.2019.11.018

Cite this

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title = "Enhanced photovoltaic performance of solution-processed Sb2Se3 thin film solar cells by optimizing device structure",

abstract = "Thin-film solar cells have attracted worldwide attention due to their high efficiency and low cost. Antimony selenide (Sb2Se3) is a promising light absorption material candidate for thin-film solar cells due to its suitable band gap, abundance, low toxicity, and high chemical stability. Herein, we fabricate an Sb2Se3 thin film solar cell using a simple hydrazine solution process. By controlling the thickness of the photoactive layer and inserting a poly(3-hexylthiophene) hole-transporting layer, an Sb2Se3 solar cell with a power conversion efficiency of 2.45\% was achieved.",

keywords = "Antimony selenide, Hole-transporting layer, n-i-p structure, poly(3-hexylthiophene), Solution process, Thin film solar cell",

author = "Taifeng Ju and Bonkee Koo and Jo, \{Jea Woong\} and Ko, \{Min Jae\}",

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doi = "10.1016/j.cap.2019.11.018",

language = "English",

volume = "20",

pages = "282--287",

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AU - Ju, Taifeng

AU - Koo, Bonkee

AU - Jo, Jea Woong

AU - Ko, Min Jae

PY - 2020/2

Y1 - 2020/2

N2 - Thin-film solar cells have attracted worldwide attention due to their high efficiency and low cost. Antimony selenide (Sb2Se3) is a promising light absorption material candidate for thin-film solar cells due to its suitable band gap, abundance, low toxicity, and high chemical stability. Herein, we fabricate an Sb2Se3 thin film solar cell using a simple hydrazine solution process. By controlling the thickness of the photoactive layer and inserting a poly(3-hexylthiophene) hole-transporting layer, an Sb2Se3 solar cell with a power conversion efficiency of 2.45% was achieved.

AB - Thin-film solar cells have attracted worldwide attention due to their high efficiency and low cost. Antimony selenide (Sb2Se3) is a promising light absorption material candidate for thin-film solar cells due to its suitable band gap, abundance, low toxicity, and high chemical stability. Herein, we fabricate an Sb2Se3 thin film solar cell using a simple hydrazine solution process. By controlling the thickness of the photoactive layer and inserting a poly(3-hexylthiophene) hole-transporting layer, an Sb2Se3 solar cell with a power conversion efficiency of 2.45% was achieved.

KW - Antimony selenide

KW - Hole-transporting layer

KW - n-i-p structure

KW - poly(3-hexylthiophene)

KW - Solution process

KW - Thin film solar cell

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DO - 10.1016/j.cap.2019.11.018

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