Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors

M. Asif Khan, Q. Chen, C. J. Sun, J. W. Yang, M. Blasingame, M. S. Shur, H. Park

Research output: Contribution to journalArticlepeer-review

175 Scopus citations

Abstract

We report on the fabrication and characterization of Al0.1Ga0.9N/GaN heterojunction field effect transistors, both an enhancement mode and a depletion mode with a low pinchoff voltage, suitable for digital integrated circuit applications. For an enhancement mode device with a 1 μm gate length and 5 μm drain-to-source separation, the dc transconductance is around 23 mS/mm. Connecting the enhancement mode device as a switching transistor and a depletion mode device as a load, we demonstrate an AlGaN/GaN inverter.

Original languageEnglish
Pages (from-to)514-516
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number4
DOIs
StatePublished - 1996

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