Abstract
We report on the fabrication and characterization of Al 0.1Ga0.9N/GaN heterojunction field effect transistors, both an enhancement mode and a depletion mode with a low pinchoff voltage, suitable for digital integrated circuit applications. For an enhancement mode device with a 1 μm gate length and 5 μm drain-to-source separation, the dc transconductance is around 23 mS/mm. Connecting the enhancement mode device as a switching transistor and a depletion mode device as a load, we demonstrate an AlGaN/GaN inverter.
Original language | English |
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Pages (from-to) | 514 |
Number of pages | 1 |
Journal | Applied Physics Letters |
DOIs | |
State | Published - 1995 |