Enhancement of Electrical Properties of TiO2−x Oxide Semiconductor by d-Orbital Ordering Using Swift Heavy Ni-Ion Irradiation at Room Temperature

S. H. Cho; B. H. Jun; K. B. Chung

doi:10.1007/s11664-016-5116-y

Enhancement of Electrical Properties of TiO_2−x Oxide Semiconductor by d-Orbital Ordering Using Swift Heavy Ni-Ion Irradiation at Room Temperature

S. H. Cho, B. H. Jun, K. B. Chung

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The electrical properties of radiofrequency (RF)-sputtered TiO_2−x films have been investigated as a function of Ni-ion irradiation dose at room temperature. The prepared TiO_2−x films were irradiated with 130-MeV swift heavy Ni ions in the range from 5 × 10¹¹ ions/cm² to 1 × 10¹³ ions/cm². Increasing the Ni-ion irradiation dose dramatically enhanced the mobility in the TiO_2−x films from 2.2 cm²/V s to 1.24 × 10² cm²/V s, while the carrier concentration did not vary. To explain this change in the electrical properties of the TiO_2−x films, we investigated various physical properties, namely the physical structure, molecular orbital ordering in the conduction band, and shallow/deep trap states in the band-edge area below the conduction band. We suggest that the improvement in mobility originates from the ordering of the Ti 3d orbital in the conduction band. In addition, increase of the Ni-ion irradiation dose changed two distinct band-edge states below the conduction band.

Original language	English
Pages (from-to)	1300-1306
Number of pages	7
Journal	Journal of Electronic Materials
Volume	46
Issue number	2
DOIs	https://doi.org/10.1007/s11664-016-5116-y
State	Published - 1 Feb 2017

Keywords

d-orbital ordering
ion irradiation
oxide semiconductor
swift heavy Ni ion
Titanium oxide

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title = "Enhancement of Electrical Properties of TiO2−x Oxide Semiconductor by d-Orbital Ordering Using Swift Heavy Ni-Ion Irradiation at Room Temperature",

abstract = "The electrical properties of radiofrequency (RF)-sputtered TiO2−x films have been investigated as a function of Ni-ion irradiation dose at room temperature. The prepared TiO2−x films were irradiated with 130-MeV swift heavy Ni ions in the range from 5 × 1011 ions/cm2 to 1 × 1013 ions/cm2. Increasing the Ni-ion irradiation dose dramatically enhanced the mobility in the TiO2−x films from 2.2 cm2/V s to 1.24 × 102 cm2/V s, while the carrier concentration did not vary. To explain this change in the electrical properties of the TiO2−x films, we investigated various physical properties, namely the physical structure, molecular orbital ordering in the conduction band, and shallow/deep trap states in the band-edge area below the conduction band. We suggest that the improvement in mobility originates from the ordering of the Ti 3d orbital in the conduction band. In addition, increase of the Ni-ion irradiation dose changed two distinct band-edge states below the conduction band.",

keywords = "d-orbital ordering, ion irradiation, oxide semiconductor, swift heavy Ni ion, Titanium oxide",

author = "Cho, {S. H.} and Jun, {B. H.} and Chung, {K. B.}",

note = "Publisher Copyright: {\textcopyright} 2016, The Minerals, Metals & Materials Society.",

year = "2017",

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doi = "10.1007/s11664-016-5116-y",

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AU - Cho, S. H.

AU - Jun, B. H.

AU - Chung, K. B.

PY - 2017/2/1

Y1 - 2017/2/1

N2 - The electrical properties of radiofrequency (RF)-sputtered TiO2−x films have been investigated as a function of Ni-ion irradiation dose at room temperature. The prepared TiO2−x films were irradiated with 130-MeV swift heavy Ni ions in the range from 5 × 1011 ions/cm2 to 1 × 1013 ions/cm2. Increasing the Ni-ion irradiation dose dramatically enhanced the mobility in the TiO2−x films from 2.2 cm2/V s to 1.24 × 102 cm2/V s, while the carrier concentration did not vary. To explain this change in the electrical properties of the TiO2−x films, we investigated various physical properties, namely the physical structure, molecular orbital ordering in the conduction band, and shallow/deep trap states in the band-edge area below the conduction band. We suggest that the improvement in mobility originates from the ordering of the Ti 3d orbital in the conduction band. In addition, increase of the Ni-ion irradiation dose changed two distinct band-edge states below the conduction band.

AB - The electrical properties of radiofrequency (RF)-sputtered TiO2−x films have been investigated as a function of Ni-ion irradiation dose at room temperature. The prepared TiO2−x films were irradiated with 130-MeV swift heavy Ni ions in the range from 5 × 1011 ions/cm2 to 1 × 1013 ions/cm2. Increasing the Ni-ion irradiation dose dramatically enhanced the mobility in the TiO2−x films from 2.2 cm2/V s to 1.24 × 102 cm2/V s, while the carrier concentration did not vary. To explain this change in the electrical properties of the TiO2−x films, we investigated various physical properties, namely the physical structure, molecular orbital ordering in the conduction band, and shallow/deep trap states in the band-edge area below the conduction band. We suggest that the improvement in mobility originates from the ordering of the Ti 3d orbital in the conduction band. In addition, increase of the Ni-ion irradiation dose changed two distinct band-edge states below the conduction band.

KW - d-orbital ordering

KW - ion irradiation

KW - oxide semiconductor

KW - swift heavy Ni ion

KW - Titanium oxide

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ER -

Enhancement of Electrical Properties of TiO_2−x Oxide Semiconductor by d-Orbital Ordering Using Swift Heavy Ni-Ion Irradiation at Room Temperature

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