Enhancement of resistive switching performance by introducing a thin non-stoichiometric CeO 2-x switching layer in TiO 2 -based resistive random access memory

Muhammad Ismail, Shafqat Un Nisa, Anwar Manzoor Rana, Tahira Akbar, Jinju Lee, Sungjun Kim

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Abstract

By introducing a thin non-stoichiometric CeO 2-x switching layer between the high oxygen affinity metal TaN top electrode and the TiO 2 layer in a TaN/CeO 2-x /TiO 2 /Pt bilayer (BL) device, it is possible to enhance the endurance characteristics and overcome the reliability issue. Compared with a single layer device, a BL device significantly enhances the number of direct current overswitching cycles to >1.2 × 10 4 , non-destructive retention (>10 4 s), and switching uniformity. A TaON interface layer is formed which served as a reservoir of oxygen ions (O 2- ) in the SET-process and acts as an O 2- supplier to refill the oxygen vacancies in the RESET-process and so plays a key role in the formation and rupture of conductive filaments. This study demonstrates that simply introducing a thin non-stoichiometric CeO 2-x switching layer into TiO 2 -based devices can facilitate the enhancement of the endurance property for future nonvolatile memory applications.

Original languageEnglish
Article number012101
JournalApplied Physics Letters
Volume114
Issue number1
DOIs
StatePublished - 7 Jan 2019

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