Abstract
By introducing a thin non-stoichiometric CeO 2-x switching layer between the high oxygen affinity metal TaN top electrode and the TiO 2 layer in a TaN/CeO 2-x /TiO 2 /Pt bilayer (BL) device, it is possible to enhance the endurance characteristics and overcome the reliability issue. Compared with a single layer device, a BL device significantly enhances the number of direct current overswitching cycles to >1.2 × 10 4 , non-destructive retention (>10 4 s), and switching uniformity. A TaON interface layer is formed which served as a reservoir of oxygen ions (O 2- ) in the SET-process and acts as an O 2- supplier to refill the oxygen vacancies in the RESET-process and so plays a key role in the formation and rupture of conductive filaments. This study demonstrates that simply introducing a thin non-stoichiometric CeO 2-x switching layer into TiO 2 -based devices can facilitate the enhancement of the endurance property for future nonvolatile memory applications.
Original language | English |
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Article number | 012101 |
Journal | Applied Physics Letters |
Volume | 114 |
Issue number | 1 |
DOIs | |
State | Published - 7 Jan 2019 |