Enhancement of resistive switching performance by introducing a thin non-stoichiometric CeO 2-x switching layer in TiO 2 -based resistive random access memory

Muhammad Ismail, Shafqat Un Nisa, Anwar Manzoor Rana, Tahira Akbar, Jinju Lee, Sungjun Kim

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

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