Enhancement of the magnetic properties in (Ga 1-xMn x) N thin films due to Mn-delta doping

H. C. Jeon, T. W. Kang, T. W. Kim, Joongoo Kang, K. J. Chang

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Abstract

The effects of Mn delta-doping on the magnetic properties of (Ga1-x Mnx) N thin films grown on GaN buffer layers by molecular-beam epitaxy were studied. The magnetization curve as a function of the magnetic field as 5 K indicated that ferromagnetisms existed in the Mn delta-doped (Ga1-x Mnx) N and (Ga1-x Mnx) N thin films and that the magnetization in the Mn delta-doped (Ga1-x Mnx) N thin film was significantly enhanced. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga1-x Mnx) N thin film was estimated to be above room temperature. The increase of the magnetization in the Mn delta-doped (Ga1-x Mnx) N thin film in comparison with that in the (Ga1-x Mnx) N thin film was attributed to the enhancement of the carrier-mediated ferromagnetism due to increased hole concentrations. The theoretical results showed that Ga vacancies near the Mn delta-doping layer were likely to cause p -type conductance, indicating that the enhancement of the magnetic properties in (Ga1-x Mnx) N thin films originated from Mn delta doping.

Original languageEnglish
Article number092501
JournalApplied Physics Letters
Volume87
Issue number9
DOIs
StatePublished - 29 Aug 2005

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