Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping

Taehoon Sung; Kyung Park; Jong Heon Kim; Hyun Woo Park; Pilsang Yun; Jiyong Non; Seok Woo Lee; Kwon Shik Park; Soo Young Yoon; In Byeong Kang; Kwun Bum Chung; Hyun Suk Kim; Jang Yeon Kwon

Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping

Taehoon Sung
, Kyung Park
, Jong Heon Kim
, Hyun Woo Park
, Pilsang Yun
, Jiyong Non
, Seok Woo Lee
, Kwon Shik Park
, Soo Young Yoon
, In Byeong Kang
, Kwun Bum Chung
, Hyun Suk Kim
, Jang Yeon Kwon

Yonsei University
Chungnam National University
Dongguk University
LG Corporation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Device reliability and electrical properties of the a-IGZO Thin-film Transistors (TFTs) were analyzed in relation to the amount of nitrogen incorporated in the a-IGZO channel. The reliability of the a-IGZO TFTs was enhanced owing to the incorporated nitrogen, and the corresponding mechanism was studied by simulation and experiment.

Original language	English
Title of host publication	25th International Display Workshops, IDW 2018
Publisher	International Display Workshops
Pages	287-290
Number of pages	4
ISBN (Electronic)	9781510883918
State	Published - 2018
Event	25th International Display Workshops, IDW 2018 - Nagoya, Japan Duration: 12 Dec 2018 → 14 Dec 2018

Publication series

Name	Proceedings of the International Display Workshops
Volume	1
ISSN (Print)	1883-2490

Conference

Conference	25th International Display Workshops, IDW 2018
Country/Territory	Japan
City	Nagoya
Period	12/12/18 → 14/12/18

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 3 Good Health and Well-being

Keywords

IGZO
Nitrogen
Reliability

Cite this

Sung, T., Park, K., Kim, J. H., Park, H. W., Yun, P., Non, J., Lee, S. W., Park, K. S., Yoon, S. Y., Kang, I. B., Chung, K. B., Kim, H. S., & Kwon, J. Y. (2018). Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping. In 25th International Display Workshops, IDW 2018 (pp. 287-290). (Proceedings of the International Display Workshops; Vol. 1). International Display Workshops.

@inproceedings{061550c16c6b4f1f9dbea5ca4f5dcda1,

title = "Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping",

abstract = "Device reliability and electrical properties of the a-IGZO Thin-film Transistors (TFTs) were analyzed in relation to the amount of nitrogen incorporated in the a-IGZO channel. The reliability of the a-IGZO TFTs was enhanced owing to the incorporated nitrogen, and the corresponding mechanism was studied by simulation and experiment.",

keywords = "IGZO, Nitrogen, Reliability",

author = "Taehoon Sung and Kyung Park and Kim, \{Jong Heon\} and Park, \{Hyun Woo\} and Pilsang Yun and Jiyong Non and Lee, \{Seok Woo\} and Park, \{Kwon Shik\} and Yoon, \{Soo Young\} and Kang, \{In Byeong\} and Chung, \{Kwun Bum\} and Kim, \{Hyun Suk\} and Kwon, \{Jang Yeon\}",

note = "Publisher Copyright: {\textcopyright} 2018 International Display Workshops. All rights reserved.; 25th International Display Workshops, IDW 2018 ; Conference date: 12-12-2018 Through 14-12-2018",

year = "2018",

language = "English",

series = "Proceedings of the International Display Workshops",

publisher = "International Display Workshops",

pages = "287--290",

booktitle = "25th International Display Workshops, IDW 2018",

}

Sung, T, Park, K, Kim, JH, Park, HW, Yun, P, Non, J, Lee, SW, Park, KS, Yoon, SY, Kang, IB, Chung, KB , Kim, HS & Kwon, JY 2018, Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping. in 25th International Display Workshops, IDW 2018. Proceedings of the International Display Workshops, vol. 1, International Display Workshops, pp. 287-290, 25th International Display Workshops, IDW 2018, Nagoya, Japan, 12/12/18.

Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping. / Sung, Taehoon; Park, Kyung; Kim, Jong Heon et al.
25th International Display Workshops, IDW 2018. International Display Workshops, 2018. p. 287-290 (Proceedings of the International Display Workshops; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping

AU - Sung, Taehoon

AU - Park, Kyung

AU - Kim, Jong Heon

AU - Park, Hyun Woo

AU - Yun, Pilsang

AU - Non, Jiyong

AU - Lee, Seok Woo

AU - Park, Kwon Shik

AU - Yoon, Soo Young

AU - Kang, In Byeong

AU - Chung, Kwun Bum

AU - Kim, Hyun Suk

AU - Kwon, Jang Yeon

PY - 2018

Y1 - 2018

N2 - Device reliability and electrical properties of the a-IGZO Thin-film Transistors (TFTs) were analyzed in relation to the amount of nitrogen incorporated in the a-IGZO channel. The reliability of the a-IGZO TFTs was enhanced owing to the incorporated nitrogen, and the corresponding mechanism was studied by simulation and experiment.

AB - Device reliability and electrical properties of the a-IGZO Thin-film Transistors (TFTs) were analyzed in relation to the amount of nitrogen incorporated in the a-IGZO channel. The reliability of the a-IGZO TFTs was enhanced owing to the incorporated nitrogen, and the corresponding mechanism was studied by simulation and experiment.

KW - IGZO

KW - Nitrogen

KW - Reliability

UR - https://www.scopus.com/pages/publications/85072102490

M3 - Conference contribution

AN - SCOPUS:85072102490

T3 - Proceedings of the International Display Workshops

SP - 287

EP - 290

BT - 25th International Display Workshops, IDW 2018

PB - International Display Workshops

T2 - 25th International Display Workshops, IDW 2018

Y2 - 12 December 2018 through 14 December 2018

ER -

Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping

Abstract

Publication series

Conference

UN SDGs

Keywords

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