Enlarged ferromagnetic hysteresis in InMnP:Be epilayers formed by thermal diffusion using MBE-grown Mn/InP:Be bilayers

Yoon Shon, Sejoon Lee, Tae Won Kang, Youngmin Lee, Seung Woong Lee, Jin Dong Song, Hyung Jun Kim, Jeong Ju Lee, Im Taek Yoon

Research output: Contribution to journalArticlepeer-review

Abstract

The p-type InMnP:Be epilayers, which were prepared by thermal diffusion of Mn through in-situ deposition of Mn layer using molecular beam epitaxy (MBE) onto MBE-grown InP:Be epilayers and subsequent in-situ annealing at 300350 °C, were investigated. InMnP:Be epilayers prepared by the above sequence clearly showed the Mn-related emission band at 1.11.2 eV, which indicates the effective incorporation of Mn2 ions into the host layer InP:Be. The samples demonstrated very large ferromagnetic hysteresis loops with enhanced coercivity, and the ferromagnetic-to-paramagnetic transition of the samples was observed to occur at ∼85 K. These results suggest that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be effectively formed by the above-mentioned sequential in-situ processes.

Original languageEnglish
Pages (from-to)2069-2072
Number of pages4
JournalJournal of Crystal Growth
Volume312
Issue number14
DOIs
StatePublished - 1 Jul 2010

Keywords

  • A1. Diffusion
  • A3. Molecular beam epitaxy
  • B1. Manganites
  • B2. Magnetic materials
  • B2. Semiconducting indium phosphide

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