Abstract
The p-type InMnP:Be epilayers, which were prepared by thermal diffusion of Mn through in-situ deposition of Mn layer using molecular beam epitaxy (MBE) onto MBE-grown InP:Be epilayers and subsequent in-situ annealing at 300350 °C, were investigated. InMnP:Be epilayers prepared by the above sequence clearly showed the Mn-related emission band at 1.11.2 eV, which indicates the effective incorporation of Mn2 ions into the host layer InP:Be. The samples demonstrated very large ferromagnetic hysteresis loops with enhanced coercivity, and the ferromagnetic-to-paramagnetic transition of the samples was observed to occur at ∼85 K. These results suggest that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be effectively formed by the above-mentioned sequential in-situ processes.
Original language | English |
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Pages (from-to) | 2069-2072 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 312 |
Issue number | 14 |
DOIs | |
State | Published - 1 Jul 2010 |
Keywords
- A1. Diffusion
- A3. Molecular beam epitaxy
- B1. Manganites
- B2. Magnetic materials
- B2. Semiconducting indium phosphide