Epitaxial growth of Al2O3 thin films on Si(100) using ionized beam deposition

S. W. Whangbo; Y. K. Choi; K. B. Chung; H. K. Jang; C. N. Whang

doi:10.1116/1.1349730

Epitaxial growth of Al₂O₃ thin films on Si(100) using ionized beam deposition

S. W. Whangbo
, Y. K. Choi
, K. B. Chung
, H. K. Jang
, C. N. Whang

Department of Physics

Yonsei University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Semiconductor Al₂O₃ thin films were epitaxilly grown on Si(001) substrates via ionized beam deposition. The temperature was kept at 850 degrees celsius using a TMA source. The films were analyzed and exhibited stoichiometry and formed a sharp interface with the Si substrate. Results showed that the crystalline quality and surface morphology of the films were improved as the temperature increased.

Original language	English
Pages (from-to)	410-413
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	19
Issue number	2
DOIs	https://doi.org/10.1116/1.1349730
State	Published - Mar 2001

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title = "Epitaxial growth of Al2O3 thin films on Si(100) using ionized beam deposition",

abstract = "Semiconductor Al2O3 thin films were epitaxilly grown on Si(001) substrates via ionized beam deposition. The temperature was kept at 850 degrees celsius using a TMA source. The films were analyzed and exhibited stoichiometry and formed a sharp interface with the Si substrate. Results showed that the crystalline quality and surface morphology of the films were improved as the temperature increased.",

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AU - Whangbo, S. W.

AU - Choi, Y. K.

AU - Chung, K. B.

AU - Jang, H. K.

AU - Whang, C. N.

PY - 2001/3

Y1 - 2001/3

N2 - Semiconductor Al2O3 thin films were epitaxilly grown on Si(001) substrates via ionized beam deposition. The temperature was kept at 850 degrees celsius using a TMA source. The films were analyzed and exhibited stoichiometry and formed a sharp interface with the Si substrate. Results showed that the crystalline quality and surface morphology of the films were improved as the temperature increased.

AB - Semiconductor Al2O3 thin films were epitaxilly grown on Si(001) substrates via ionized beam deposition. The temperature was kept at 850 degrees celsius using a TMA source. The films were analyzed and exhibited stoichiometry and formed a sharp interface with the Si substrate. Results showed that the crystalline quality and surface morphology of the films were improved as the temperature increased.

UR - https://www.scopus.com/pages/publications/0035271905

U2 - 10.1116/1.1349730

DO - 10.1116/1.1349730

M3 - Article

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SN - 0734-2101

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SP - 410

EP - 413

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 2

ER -

Epitaxial growth of Al₂O₃ thin films on Si(100) using ionized beam deposition

Abstract

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