Erratum: Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks (Nanotechnology (2012) 23 (405602))

Young S. Park; Mark J. Holmes; Robert A. Taylor; Kwang S. Kim; Seung Woong Lee; Haeri Ju; Hyunsik Im

doi:10.1088/0957-4484/23/49/499502

Erratum: Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks (Nanotechnology (2012) 23 (405602))

Young S. Park, Mark J. Holmes, Robert A. Taylor, Kwang S. Kim, Seung Woong Lee, Haeri Ju, Hyunsik Im

Division of System Semiconductor

Research output: Contribution to journal › Comment/debate

Original language	English
Article number	499502
Journal	Nanotechnology
Volume	23
Issue number	49
DOIs	https://doi.org/10.1088/0957-4484/23/49/499502
State	Published - 14 Dec 2012

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10.1088/0957-4484/23/49/499502

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title = "Erratum: Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks (Nanotechnology (2012) 23 (405602))",

author = "Park, {Young S.} and Holmes, {Mark J.} and Taylor, {Robert A.} and Kim, {Kwang S.} and Lee, {Seung Woong} and Haeri Ju and Hyunsik Im",

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T2 - Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks (Nanotechnology (2012) 23 (405602))

AU - Park, Young S.

AU - Holmes, Mark J.

AU - Taylor, Robert A.

AU - Kim, Kwang S.

AU - Lee, Seung Woong

AU - Ju, Haeri

AU - Im, Hyunsik

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VL - 23

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ER -

Erratum: Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks (Nanotechnology (2012) 23 (405602))

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