Erratum: Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks (Nanotechnology (2012) 23 (405602))

Young S. Park; Mark J. Holmes; Robert A. Taylor; Kwang S. Kim; Seung Woong Lee; Haeri Ju; Hyunsik Im

doi:10.1088/0957-4484/23/49/499502

Erratum: Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks (Nanotechnology (2012) 23 (405602))

Young S. Park
, Mark J. Holmes
, Robert A. Taylor
, Kwang S. Kim
, Seung Woong Lee
, Haeri Ju
, Hyunsik Im

Division of System Semiconductor

University of Oxford
Pohang University of Science and Technology
Konkuk University
Dongguk University

Research output: Contribution to journal › Comment/debate

Original language	English
Article number	499502
Journal	Nanotechnology
Volume	23
Issue number	49
DOIs	https://doi.org/10.1088/0957-4484/23/49/499502
State	Published - 14 Dec 2012

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10.1088/0957-4484/23/49/499502

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title = "Erratum: Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks (Nanotechnology (2012) 23 (405602))",

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T2 - Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks (Nanotechnology (2012) 23 (405602))

AU - Park, Young S.

AU - Holmes, Mark J.

AU - Taylor, Robert A.

AU - Kim, Kwang S.

AU - Lee, Seung Woong

AU - Ju, Haeri

AU - Im, Hyunsik

PY - 2012/12/14

Y1 - 2012/12/14

UR - https://www.scopus.com/pages/publications/84870045447

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DO - 10.1088/0957-4484/23/49/499502

M3 - Comment/debate

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VL - 23

JO - Nanotechnology

JF - Nanotechnology

IS - 49

M1 - 499502

ER -

Erratum: Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks (Nanotechnology (2012) 23 (405602))

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