TY - JOUR
T1 - Evaluation of the physical, optical, and electrical properties of SnO2
T2 - F thin films prepared by nebulized spray pyrolysis for optoelectronics
AU - Kumar, K. Deva Arun
AU - Valanarasu, S.
AU - Jeyadheepan, K.
AU - Kim, Hyun Seok
AU - Vikraman, Dhanasekaran
N1 - Publisher Copyright:
© 2017, Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2018/3/1
Y1 - 2018/3/1
N2 - Fluorine-doped tin oxide (SnO2:F, FTO) thin films were prepared by the nebulized spray pyrolysis technique on glass substrates using tin(IV) chloride pentahydrate (SnCl2·5H2O) and ammonium fluoride (NH4F) as source materials. Different volumes of solvent were used to prepare the spray solution, and their effects on structural, optical, morphological, and electrical properties were investigated. X-ray diffraction patterns revealed the polycrystalline tetragonal structure of FTO films. FESEM images demonstrated well-aligned trigonal-shaped nano-grains. Optical band gap values were estimated to be in the range of 3.71–3.66 eV by Tauc’s plot. The effects of solvent volume on the resistivity, conductivity, carrier concentration, mobility, and figure of merit of FTO films were examined. The lowest electrical resistivity and sheet resistance values were 1.90 × 10−4 Ω cm and 4.96 Ω/cm, respectively.
AB - Fluorine-doped tin oxide (SnO2:F, FTO) thin films were prepared by the nebulized spray pyrolysis technique on glass substrates using tin(IV) chloride pentahydrate (SnCl2·5H2O) and ammonium fluoride (NH4F) as source materials. Different volumes of solvent were used to prepare the spray solution, and their effects on structural, optical, morphological, and electrical properties were investigated. X-ray diffraction patterns revealed the polycrystalline tetragonal structure of FTO films. FESEM images demonstrated well-aligned trigonal-shaped nano-grains. Optical band gap values were estimated to be in the range of 3.71–3.66 eV by Tauc’s plot. The effects of solvent volume on the resistivity, conductivity, carrier concentration, mobility, and figure of merit of FTO films were examined. The lowest electrical resistivity and sheet resistance values were 1.90 × 10−4 Ω cm and 4.96 Ω/cm, respectively.
UR - http://www.scopus.com/inward/record.url?scp=85034643858&partnerID=8YFLogxK
U2 - 10.1007/s10854-017-8295-2
DO - 10.1007/s10854-017-8295-2
M3 - Article
AN - SCOPUS:85034643858
SN - 0957-4522
VL - 29
SP - 3648
EP - 3656
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 5
ER -