Excitonic transitions in (Ga1-xMnx)N thin films with high Curie temperature

Hee Chang Jeon; Ji Ah Lee; Yoon Shon; Seung Joo Lee; Tae Won Kang; Tae Whan Kim; Yung Kee Yeo; Yong Hun Cho; Mun Deok Kim

doi:10.1016/j.jcrysgro.2004.12.125

Excitonic transitions in (Ga_1-xMn_x)N thin films with high Curie temperature

Hee Chang Jeon, Ji Ah Lee, Yoon Shon, Seung Joo Lee, Tae Won Kang, Tae Whan Kim, Yung Kee Yeo, Yong Hun Cho, Mun Deok Kim

Quantum-Functional Semiconductor Research Center

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

(Ga_1-xMn_x)N thin films grown on GaN buffers by using molecular beam epitaxy were investigated with the goal of producing diluted magnetic semiconductors with excitonic transitions. The magnetization curves as functions of the magnetic field at 5 and 300 K indicated that ferromagnetism existed in the (Ga_1-xMn_x)N thin films and that the Curie temperature of the (Ga_1- _xMn_x)N thin film was above room temperature. Photoluminescence spectra showed the band-edge exciton transitions in (Ga _1-xMn_x)N thin films, indicative of the Mn atoms acting as substituents.

Original language	English
Pages (from-to)	671-674
Number of pages	4
Journal	Journal of Crystal Growth
Volume	278
Issue number	1-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.12.125
State	Published - 1 May 2005
Event	13th International Conference on Molecular Beam Epitaxy - Duration: 22 Aug 2004 → 27 Aug 2004

Keywords

A1. Characterization
A3. Molecular beam epitaxy
B1. Nitrides

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10.1016/j.jcrysgro.2004.12.125

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title = "Excitonic transitions in (Ga1-xMnx)N thin films with high Curie temperature",

abstract = "(Ga1-xMnx)N thin films grown on GaN buffers by using molecular beam epitaxy were investigated with the goal of producing diluted magnetic semiconductors with excitonic transitions. The magnetization curves as functions of the magnetic field at 5 and 300 K indicated that ferromagnetism existed in the (Ga1-xMnx)N thin films and that the Curie temperature of the (Ga1- xMnx)N thin film was above room temperature. Photoluminescence spectra showed the band-edge exciton transitions in (Ga 1-xMnx)N thin films, indicative of the Mn atoms acting as substituents.",

keywords = "A1. Characterization, A3. Molecular beam epitaxy, B1. Nitrides",

author = "Jeon, {Hee Chang} and Lee, {Ji Ah} and Yoon Shon and Lee, {Seung Joo} and Kang, {Tae Won} and Kim, {Tae Whan} and Yeo, {Yung Kee} and Cho, {Yong Hun} and Kim, {Mun Deok}",

year = "2005",

month = may,

day = "1",

doi = "10.1016/j.jcrysgro.2004.12.125",

language = "English",

volume = "278",

pages = "671--674",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

note = "13th International Conference on Molecular Beam Epitaxy ; Conference date: 22-08-2004 Through 27-08-2004",

}

TY - JOUR

T1 - Excitonic transitions in (Ga1-xMnx)N thin films with high Curie temperature

AU - Jeon, Hee Chang

AU - Lee, Ji Ah

AU - Shon, Yoon

AU - Lee, Seung Joo

AU - Kang, Tae Won

AU - Kim, Tae Whan

AU - Yeo, Yung Kee

AU - Cho, Yong Hun

AU - Kim, Mun Deok

PY - 2005/5/1

Y1 - 2005/5/1

N2 - (Ga1-xMnx)N thin films grown on GaN buffers by using molecular beam epitaxy were investigated with the goal of producing diluted magnetic semiconductors with excitonic transitions. The magnetization curves as functions of the magnetic field at 5 and 300 K indicated that ferromagnetism existed in the (Ga1-xMnx)N thin films and that the Curie temperature of the (Ga1- xMnx)N thin film was above room temperature. Photoluminescence spectra showed the band-edge exciton transitions in (Ga 1-xMnx)N thin films, indicative of the Mn atoms acting as substituents.

AB - (Ga1-xMnx)N thin films grown on GaN buffers by using molecular beam epitaxy were investigated with the goal of producing diluted magnetic semiconductors with excitonic transitions. The magnetization curves as functions of the magnetic field at 5 and 300 K indicated that ferromagnetism existed in the (Ga1-xMnx)N thin films and that the Curie temperature of the (Ga1- xMnx)N thin film was above room temperature. Photoluminescence spectra showed the band-edge exciton transitions in (Ga 1-xMnx)N thin films, indicative of the Mn atoms acting as substituents.

KW - A1. Characterization

KW - A3. Molecular beam epitaxy

KW - B1. Nitrides

UR - http://www.scopus.com/inward/record.url?scp=18444365628&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.12.125

DO - 10.1016/j.jcrysgro.2004.12.125

M3 - Conference article

AN - SCOPUS:18444365628

SN - 0022-0248

VL - 278

SP - 671

EP - 674

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

T2 - 13th International Conference on Molecular Beam Epitaxy

Y2 - 22 August 2004 through 27 August 2004

ER -

Excitonic transitions in (Ga_1-xMn_x)N thin films with high Curie temperature

Abstract

Keywords

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