Experimental and theoretical analysis of Cu diffusion in Cu-induced germanium crystallization

Jung Woo Baek, Jinok Kim, Jin Hong Park

Research output: Contribution to journalArticlepeer-review

Abstract

A precise understanding of the diffusion of metal atoms into thin semiconductor films during metal-induced crystallization (MIC) is difficult to be achieved, because the metal profiles do not follow standard Gaussian- or Error-distribution-based diffusion theory. In order to fit the abnormal metal profiles in poly-Ge films obtained by MIC, a new diffusion model consisting of two oppositely directed Error distribution functions is proposed and validated through a statistical estimation. In particular, we experimentally investigate the characteristics and metal profiles of the different thick poly-Ge films crystallized by MIC at various temperatures (250, 300, and 350°C) through atomic force microscopy (AFM), Raman spectroscopy, and secondary ion mass spectroscopy (SIMS) measurements.

Original languageEnglish
Pages (from-to)12900-12903
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number12
DOIs
StatePublished - 1 Dec 2016

Keywords

  • Fitting method
  • Germanium
  • Metal profile
  • MIC

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