Abstract
We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10-5 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices.
Original language | English |
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Pages (from-to) | 1060-1063 |
Number of pages | 4 |
Journal | Current Applied Physics |
Volume | 13 |
Issue number | 6 |
DOIs | |
State | Published - Aug 2013 |
Keywords
- Activation energy
- Diffusivity
- Germanium
- In-situ
- Phosphorus