@inproceedings{af8bb26ed9a3469db050178eff4945c0,
title = "Experimental evidence of scaling effect by using novel crown shape RRAM structure",
abstract = "Experimental evidence of scaling effect by using novel crown shape RRAM structure which can efficiently be controlled by switching area. This structure has a low reset current (<10 μA) by controlling localized conducting filament (CF) at the nanoscale for low power switching resistive random access memory (RRAM). This novel structure also shows the advantages for forming-less process originated from vertical deposition as well as reducing active area size with a relatively large technology node.",
author = "Sungjun Kim and Ryoo, {Kyung Chang} and Oh, {Jeong Hoon} and Sunghun Jung and Park, {Byung Gook}",
year = "2012",
doi = "10.1109/NANO.2012.6321967",
language = "English",
isbn = "9781467321983",
series = "Proceedings of the IEEE Conference on Nanotechnology",
booktitle = "2012 12th IEEE International Conference on Nanotechnology, NANO 2012",
note = "2012 12th IEEE International Conference on Nanotechnology, NANO 2012 ; Conference date: 20-08-2012 Through 23-08-2012",
}