Extended defects in Ge-condensed SGOI structures fabricated by using proton and helium implantations

D. W. Kwak, M. W. Seo, D. H. Kim, D. W. Lee, Y. H. Lee, H. Y. Cho

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The SGOI structures using Ge condensation method have been fabricated by rapid thermal chemical vapor deposition using H+ and He+ ion-implantations, and deep level defects investigated using the deep level transient spectroscopy (DLTS). According to DLTS measurement, a deep level defect induced during Ge condensation process was found at 0,28 eV above the valence band with capture cross sections of 2.67×1017 cm -2 and two extended deep levels at 0.54 eV and 0.42 eV above the valence band with capture cross sections of 3.17×1014 cm -2 0.96×1015 cm-2 respectively. Of ion-implanted samples, the densities of the newly generated defect as well as the existing defects were decreased effectively. And, Coulomb barrier height of the extended defect was drastically reduced. Thus, we suggest that the Ge condensation method using the H+ ion implantation could reduce deep level defects generated from the Ge condensation and control electrical properties of condensed SiGe layers.

Original languageEnglish
Title of host publicationECS Transactions - SiGe, Ge, and Related Compounds 3
Subtitle of host publicationMaterials, Processing, and Devices
PublisherElectrochemical Society Inc.
Pages193-201
Number of pages9
Edition10
ISBN (Print)9781566776561
DOIs
StatePublished - 2009
Event3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States
Duration: 12 Oct 200817 Oct 2008

Publication series

NameECS Transactions
Number10
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
Country/TerritoryUnited States
CityHonolulu, HI
Period12/10/0817/10/08

Fingerprint

Dive into the research topics of 'Extended defects in Ge-condensed SGOI structures fabricated by using proton and helium implantations'. Together they form a unique fingerprint.

Cite this