Abstract
In this study, we report for the first time a simple bar-coating process of soluble metal oxide semiconductors, consuming the 0.1 g of precursor solution in 4 in. sized devices with a cost of only $0.05. To resolve the issue of critical degradation in device performance observable in slow-evaporation-based film formation processes, we incorporate the unprecedentedly developed, poly(acrylic acid)-decorated multiwalled carbon nanotubes (MWNTs) in oxide semiconductors. It is demonstrated that a field-effect mobility is improved to the value of 7.34 cm2/(V s) (improvement by a factor of 2) without any critical variation in threshold voltage and on/off current ratio.
Original language | English |
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Pages (from-to) | 29858-29865 |
Number of pages | 8 |
Journal | ACS Applied Materials and Interfaces |
Volume | 8 |
Issue number | 44 |
DOIs | |
State | Published - 9 Nov 2016 |
Keywords
- carbon nanotube
- low cost
- oxide semiconductor
- scalable
- thin-film transistor