Fabrication and characterization of silicon-nanocrystal using platinum-nanomask

Sejoon Lee; Young Suk Shim; Hoon Young Cho; Tae Won Kang; Deuk Young Kim; Youn Hwan Lee; Kang L. Wang

doi:10.1016/j.tsf.2003.10.132

Fabrication and characterization of silicon-nanocrystal using platinum-nanomask

Sejoon Lee, Young Suk Shim, Hoon Young Cho, Tae Won Kang, Deuk Young Kim, Youn Hwan Lee, Kang L. Wang

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

We have fabricated Si nanocrystals utilizing nanometer-sized Pt islands acting as etching-masks on SiO_x/amorphous-Si/SiO_x/p-Si (100) thin films. In the measurement of transmission electron microscopy the Si nanocrystals embedded in SiO₂ were observed, and in the measurement of cathodoluminescence spectroscopy at 77 K Si nanocrystal-related peaks were observed at 462 and 647 nm. For the Al/SiO ₂/nanocrystalline-Si/SiO₂/p-Si capacitor structure, a hysteretic behavior with the flatband voltage shift of 0.592 V was observed in the measurement of capacitance-voltage characteristic at 300 K. These results indicate that Si nanocrystals can be formed by using a nanosized Pt island etching-mask, and that Si nanocrystals embedded in SiO₂ layer act as Si quantum dots which hold promise potential applications.

Original language	English
Pages (from-to)	379-383
Number of pages	5
Journal	Thin Solid Films
Volume	451-452
DOIs	https://doi.org/10.1016/j.tsf.2003.10.132
State	Published - 22 Mar 2004
Event	Proceedings of Symposium D on Thin Film and Nano-Structured - Strasbourg, France Duration: 10 Jun 2003 → 13 Jun 2003

Keywords

Cathodoluminescence
Flatband voltage shift
Platinum-nanomask
Silicon nanocrystals

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10.1016/j.tsf.2003.10.132

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@article{f2e2bf8993754de7bd9eb224832cf05e,

title = "Fabrication and characterization of silicon-nanocrystal using platinum-nanomask",

abstract = "We have fabricated Si nanocrystals utilizing nanometer-sized Pt islands acting as etching-masks on SiOx/amorphous-Si/SiOx/p-Si (100) thin films. In the measurement of transmission electron microscopy the Si nanocrystals embedded in SiO2 were observed, and in the measurement of cathodoluminescence spectroscopy at 77 K Si nanocrystal-related peaks were observed at 462 and 647 nm. For the Al/SiO 2/nanocrystalline-Si/SiO2/p-Si capacitor structure, a hysteretic behavior with the flatband voltage shift of 0.592 V was observed in the measurement of capacitance-voltage characteristic at 300 K. These results indicate that Si nanocrystals can be formed by using a nanosized Pt island etching-mask, and that Si nanocrystals embedded in SiO2 layer act as Si quantum dots which hold promise potential applications.",

keywords = "Cathodoluminescence, Flatband voltage shift, Platinum-nanomask, Silicon nanocrystals",

author = "Sejoon Lee and Shim, {Young Suk} and Cho, {Hoon Young} and Kang, {Tae Won} and Kim, {Deuk Young} and Lee, {Youn Hwan} and Wang, {Kang L.}",

year = "2004",

month = mar,

day = "22",

doi = "10.1016/j.tsf.2003.10.132",

language = "English",

volume = "451-452",

pages = "379--383",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

note = "Proceedings of Symposium D on Thin Film and Nano-Structured ; Conference date: 10-06-2003 Through 13-06-2003",

}

TY - JOUR

T1 - Fabrication and characterization of silicon-nanocrystal using platinum-nanomask

AU - Lee, Sejoon

AU - Shim, Young Suk

AU - Cho, Hoon Young

AU - Kang, Tae Won

AU - Kim, Deuk Young

AU - Lee, Youn Hwan

AU - Wang, Kang L.

PY - 2004/3/22

Y1 - 2004/3/22

N2 - We have fabricated Si nanocrystals utilizing nanometer-sized Pt islands acting as etching-masks on SiOx/amorphous-Si/SiOx/p-Si (100) thin films. In the measurement of transmission electron microscopy the Si nanocrystals embedded in SiO2 were observed, and in the measurement of cathodoluminescence spectroscopy at 77 K Si nanocrystal-related peaks were observed at 462 and 647 nm. For the Al/SiO 2/nanocrystalline-Si/SiO2/p-Si capacitor structure, a hysteretic behavior with the flatband voltage shift of 0.592 V was observed in the measurement of capacitance-voltage characteristic at 300 K. These results indicate that Si nanocrystals can be formed by using a nanosized Pt island etching-mask, and that Si nanocrystals embedded in SiO2 layer act as Si quantum dots which hold promise potential applications.

AB - We have fabricated Si nanocrystals utilizing nanometer-sized Pt islands acting as etching-masks on SiOx/amorphous-Si/SiOx/p-Si (100) thin films. In the measurement of transmission electron microscopy the Si nanocrystals embedded in SiO2 were observed, and in the measurement of cathodoluminescence spectroscopy at 77 K Si nanocrystal-related peaks were observed at 462 and 647 nm. For the Al/SiO 2/nanocrystalline-Si/SiO2/p-Si capacitor structure, a hysteretic behavior with the flatband voltage shift of 0.592 V was observed in the measurement of capacitance-voltage characteristic at 300 K. These results indicate that Si nanocrystals can be formed by using a nanosized Pt island etching-mask, and that Si nanocrystals embedded in SiO2 layer act as Si quantum dots which hold promise potential applications.

KW - Cathodoluminescence

KW - Flatband voltage shift

KW - Platinum-nanomask

KW - Silicon nanocrystals

UR - http://www.scopus.com/inward/record.url?scp=17644435236&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2003.10.132

DO - 10.1016/j.tsf.2003.10.132

M3 - Conference article

AN - SCOPUS:17644435236

SN - 0040-6090

VL - 451-452

SP - 379

EP - 383

JO - Thin Solid Films

JF - Thin Solid Films

T2 - Proceedings of Symposium D on Thin Film and Nano-Structured

Y2 - 10 June 2003 through 13 June 2003

ER -

Fabrication and characterization of silicon-nanocrystal using platinum-nanomask

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Keywords

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