Fabrication and characterization of the pentacene thin film transistor with a Gd2O3 gate insulator

S. J. Kang; K. B. Chung; D. S. Park; H. J. Kim; Y. K. Choi; M. H. Jang; M. Noh; C. N. Whang

doi:10.1016/j.synthmet.2004.08.021

Fabrication and characterization of the pentacene thin film transistor with a Gd₂O₃ gate insulator

S. J. Kang, K. B. Chung, D. S. Park, H. J. Kim, Y. K. Choi, M. H. Jang, M. Noh, C. N. Whang

Department of Physics

Yonsei University

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Pentacene thin film transistors (TFTs) on a high-κ Gd ₂O₃ gate insulator layer were fabricated and characterized. The Gd₂O₃ layer was grown by ion beam assisted deposition (IBAD) on a heavily-doped silicon substrate in ultra high vacuum, where the measured dielectric constant of the oxide layer was about 7.4. The maximum field effect mobility and the on/off ratio of the TFTs were 0.1 cm²/Vs and about 10³, respectively. The threshold voltage of the device was dramatically decreased (15.3 → -3.5 V) as the high-κ Gd₂O₃ layer replaced the SiO₂ layer.

Original language	English
Pages (from-to)	351-354
Number of pages	4
Journal	Synthetic Metals
Volume	146
Issue number	3
DOIs	https://doi.org/10.1016/j.synthmet.2004.08.021
State	Published - 3 Nov 2004

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title = "Fabrication and characterization of the pentacene thin film transistor with a Gd2O3 gate insulator",

abstract = "Pentacene thin film transistors (TFTs) on a high-κ Gd 2O3 gate insulator layer were fabricated and characterized. The Gd2O3 layer was grown by ion beam assisted deposition (IBAD) on a heavily-doped silicon substrate in ultra high vacuum, where the measured dielectric constant of the oxide layer was about 7.4. The maximum field effect mobility and the on/off ratio of the TFTs were 0.1 cm2/Vs and about 103, respectively. The threshold voltage of the device was dramatically decreased (15.3 → -3.5 V) as the high-κ Gd2O3 layer replaced the SiO2 layer.",

author = "Kang, {S. J.} and Chung, {K. B.} and Park, {D. S.} and Kim, {H. J.} and Choi, {Y. K.} and Jang, {M. H.} and M. Noh and Whang, {C. N.}",

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T1 - Fabrication and characterization of the pentacene thin film transistor with a Gd2O3 gate insulator

AU - Kang, S. J.

AU - Chung, K. B.

AU - Park, D. S.

AU - Kim, H. J.

AU - Choi, Y. K.

AU - Jang, M. H.

AU - Noh, M.

AU - Whang, C. N.

PY - 2004/11/3

Y1 - 2004/11/3

N2 - Pentacene thin film transistors (TFTs) on a high-κ Gd 2O3 gate insulator layer were fabricated and characterized. The Gd2O3 layer was grown by ion beam assisted deposition (IBAD) on a heavily-doped silicon substrate in ultra high vacuum, where the measured dielectric constant of the oxide layer was about 7.4. The maximum field effect mobility and the on/off ratio of the TFTs were 0.1 cm2/Vs and about 103, respectively. The threshold voltage of the device was dramatically decreased (15.3 → -3.5 V) as the high-κ Gd2O3 layer replaced the SiO2 layer.

AB - Pentacene thin film transistors (TFTs) on a high-κ Gd 2O3 gate insulator layer were fabricated and characterized. The Gd2O3 layer was grown by ion beam assisted deposition (IBAD) on a heavily-doped silicon substrate in ultra high vacuum, where the measured dielectric constant of the oxide layer was about 7.4. The maximum field effect mobility and the on/off ratio of the TFTs were 0.1 cm2/Vs and about 103, respectively. The threshold voltage of the device was dramatically decreased (15.3 → -3.5 V) as the high-κ Gd2O3 layer replaced the SiO2 layer.

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DO - 10.1016/j.synthmet.2004.08.021

M3 - Article

AN - SCOPUS:9344242429

SN - 0379-6779

VL - 146

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EP - 354

JO - Synthetic Metals

JF - Synthetic Metals

IS - 3

ER -

Fabrication and characterization of the pentacene thin film transistor with a Gd₂O₃ gate insulator

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