Fabrication and characterization of the pentacene thin film transistor with a Gd2O3 gate insulator

S. J. Kang; K. B. Chung; D. S. Park; H. J. Kim; Y. K. Choi; M. H. Jang; M. Noh; C. N. Whang

doi:10.1016/j.synthmet.2004.08.021

Fabrication and characterization of the pentacene thin film transistor with a Gd₂O₃ gate insulator

S. J. Kang
, K. B. Chung
, D. S. Park
, H. J. Kim
, Y. K. Choi
, M. H. Jang
, M. Noh
, C. N. Whang

Department of Physics

Yonsei University

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Pentacene thin film transistors (TFTs) on a high-κ Gd ₂O₃ gate insulator layer were fabricated and characterized. The Gd₂O₃ layer was grown by ion beam assisted deposition (IBAD) on a heavily-doped silicon substrate in ultra high vacuum, where the measured dielectric constant of the oxide layer was about 7.4. The maximum field effect mobility and the on/off ratio of the TFTs were 0.1 cm²/Vs and about 10³, respectively. The threshold voltage of the device was dramatically decreased (15.3 → -3.5 V) as the high-κ Gd₂O₃ layer replaced the SiO₂ layer.

Original language	English
Pages (from-to)	351-354
Number of pages	4
Journal	Synthetic Metals
Volume	146
Issue number	3
DOIs	https://doi.org/10.1016/j.synthmet.2004.08.021
State	Published - 3 Nov 2004

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title = "Fabrication and characterization of the pentacene thin film transistor with a Gd2O3 gate insulator",

abstract = "Pentacene thin film transistors (TFTs) on a high-κ Gd 2O3 gate insulator layer were fabricated and characterized. The Gd2O3 layer was grown by ion beam assisted deposition (IBAD) on a heavily-doped silicon substrate in ultra high vacuum, where the measured dielectric constant of the oxide layer was about 7.4. The maximum field effect mobility and the on/off ratio of the TFTs were 0.1 cm2/Vs and about 103, respectively. The threshold voltage of the device was dramatically decreased (15.3 → -3.5 V) as the high-κ Gd2O3 layer replaced the SiO2 layer.",

author = "Kang, \{S. J.\} and Chung, \{K. B.\} and Park, \{D. S.\} and Kim, \{H. J.\} and Choi, \{Y. K.\} and Jang, \{M. H.\} and M. Noh and Whang, \{C. N.\}",

year = "2004",

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doi = "10.1016/j.synthmet.2004.08.021",

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T1 - Fabrication and characterization of the pentacene thin film transistor with a Gd2O3 gate insulator

AU - Kang, S. J.

AU - Chung, K. B.

AU - Park, D. S.

AU - Kim, H. J.

AU - Choi, Y. K.

AU - Jang, M. H.

AU - Noh, M.

AU - Whang, C. N.

PY - 2004/11/3

Y1 - 2004/11/3

N2 - Pentacene thin film transistors (TFTs) on a high-κ Gd 2O3 gate insulator layer were fabricated and characterized. The Gd2O3 layer was grown by ion beam assisted deposition (IBAD) on a heavily-doped silicon substrate in ultra high vacuum, where the measured dielectric constant of the oxide layer was about 7.4. The maximum field effect mobility and the on/off ratio of the TFTs were 0.1 cm2/Vs and about 103, respectively. The threshold voltage of the device was dramatically decreased (15.3 → -3.5 V) as the high-κ Gd2O3 layer replaced the SiO2 layer.

AB - Pentacene thin film transistors (TFTs) on a high-κ Gd 2O3 gate insulator layer were fabricated and characterized. The Gd2O3 layer was grown by ion beam assisted deposition (IBAD) on a heavily-doped silicon substrate in ultra high vacuum, where the measured dielectric constant of the oxide layer was about 7.4. The maximum field effect mobility and the on/off ratio of the TFTs were 0.1 cm2/Vs and about 103, respectively. The threshold voltage of the device was dramatically decreased (15.3 → -3.5 V) as the high-κ Gd2O3 layer replaced the SiO2 layer.

UR - https://www.scopus.com/pages/publications/9344242429

U2 - 10.1016/j.synthmet.2004.08.021

DO - 10.1016/j.synthmet.2004.08.021

M3 - Article

AN - SCOPUS:9344242429

SN - 0379-6779

VL - 146

SP - 351

EP - 354

JO - Synthetic Metals

JF - Synthetic Metals

IS - 3

ER -

Fabrication and characterization of the pentacene thin film transistor with a Gd₂O₃ gate insulator

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