Fabrication of Eu doped CdO [Al/Eu-nCdO/p-Si/Al] photodiodes by perfume atomizer based spray technique for opto-electronic applications

M. Ravikumar, V. Ganesh, Mohd Shkir, R. Chandramohan, K. Deva Arun Kumar, S. Valanarasu, A. Kathalingam, S. AlFaify

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

In this study, thin films of cadmium oxide (CdO) with different concentrations (0, 1, 3, and 5 wt%) of Eu doping were deposited onto Si and glass substrates by a novel and facile spray technique using simple perfume atomizer for the first time. Prepared films were characterized for structural, morphological, optical properties and the photo diode studies, using X-ray diffraction, scanning electron microscope, UV–Vis spectrophotometer, I–V characteristics, and fundamental parameters are reported. All the prepared Eu:CdO films exhibit cubic structure. The preferential orientation is along (200) plane. Scanning electron microscopy study indicates the growth of smooth and pin-hole free films with clusters of homogeneous grains. The values of band gap energy are found to be varying from 2.42 to 2.33 eV for various Eu doping concentration from 0 to 5 wt%. EDAX studies revealed the presence of Eu, Cd and O elements without any other impurities. FTIR spectra showed a peak at 575 cm−1 confirming the stretching mode of Cd–O. The resistivity (ρ), high carrier concentration (n) and carrier mobility (μ) for 3 wt% CdO thin film are found to be 0.452 × 10−3(Ω.cm), 17.82 × 1020 cm−3 and 7.757 cm2/V, respectively. Current-voltage measurements on the fabricated nanostructured Al/Eu-nCdO/p-Si/Al heterojunction device showed a non-linear electric characteristics indicating diode like behaviour.

Original languageEnglish
Pages (from-to)311-318
Number of pages8
JournalJournal of Molecular Structure
Volume1160
DOIs
StatePublished - 15 May 2018

Keywords

  • Doping
  • Electrical properties
  • Heterojunction devices
  • Optical properties
  • Oxides semiconductors
  • Thin films

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