TY - JOUR
T1 - Fabrication of Eu doped CdO [Al/Eu-nCdO/p-Si/Al] photodiodes by perfume atomizer based spray technique for opto-electronic applications
AU - Ravikumar, M.
AU - Ganesh, V.
AU - Shkir, Mohd
AU - Chandramohan, R.
AU - Arun Kumar, K. Deva
AU - Valanarasu, S.
AU - Kathalingam, A.
AU - AlFaify, S.
N1 - Publisher Copyright:
© 2018 Elsevier B.V.
PY - 2018/5/15
Y1 - 2018/5/15
N2 - In this study, thin films of cadmium oxide (CdO) with different concentrations (0, 1, 3, and 5 wt%) of Eu doping were deposited onto Si and glass substrates by a novel and facile spray technique using simple perfume atomizer for the first time. Prepared films were characterized for structural, morphological, optical properties and the photo diode studies, using X-ray diffraction, scanning electron microscope, UV–Vis spectrophotometer, I–V characteristics, and fundamental parameters are reported. All the prepared Eu:CdO films exhibit cubic structure. The preferential orientation is along (200) plane. Scanning electron microscopy study indicates the growth of smooth and pin-hole free films with clusters of homogeneous grains. The values of band gap energy are found to be varying from 2.42 to 2.33 eV for various Eu doping concentration from 0 to 5 wt%. EDAX studies revealed the presence of Eu, Cd and O elements without any other impurities. FTIR spectra showed a peak at 575 cm−1 confirming the stretching mode of Cd–O. The resistivity (ρ), high carrier concentration (n) and carrier mobility (μ) for 3 wt% CdO thin film are found to be 0.452 × 10−3(Ω.cm), 17.82 × 1020 cm−3 and 7.757 cm2/V, respectively. Current-voltage measurements on the fabricated nanostructured Al/Eu-nCdO/p-Si/Al heterojunction device showed a non-linear electric characteristics indicating diode like behaviour.
AB - In this study, thin films of cadmium oxide (CdO) with different concentrations (0, 1, 3, and 5 wt%) of Eu doping were deposited onto Si and glass substrates by a novel and facile spray technique using simple perfume atomizer for the first time. Prepared films were characterized for structural, morphological, optical properties and the photo diode studies, using X-ray diffraction, scanning electron microscope, UV–Vis spectrophotometer, I–V characteristics, and fundamental parameters are reported. All the prepared Eu:CdO films exhibit cubic structure. The preferential orientation is along (200) plane. Scanning electron microscopy study indicates the growth of smooth and pin-hole free films with clusters of homogeneous grains. The values of band gap energy are found to be varying from 2.42 to 2.33 eV for various Eu doping concentration from 0 to 5 wt%. EDAX studies revealed the presence of Eu, Cd and O elements without any other impurities. FTIR spectra showed a peak at 575 cm−1 confirming the stretching mode of Cd–O. The resistivity (ρ), high carrier concentration (n) and carrier mobility (μ) for 3 wt% CdO thin film are found to be 0.452 × 10−3(Ω.cm), 17.82 × 1020 cm−3 and 7.757 cm2/V, respectively. Current-voltage measurements on the fabricated nanostructured Al/Eu-nCdO/p-Si/Al heterojunction device showed a non-linear electric characteristics indicating diode like behaviour.
KW - Doping
KW - Electrical properties
KW - Heterojunction devices
KW - Optical properties
KW - Oxides semiconductors
KW - Thin films
UR - http://www.scopus.com/inward/record.url?scp=85042717250&partnerID=8YFLogxK
U2 - 10.1016/j.molstruc.2018.01.095
DO - 10.1016/j.molstruc.2018.01.095
M3 - Article
AN - SCOPUS:85042717250
SN - 0022-2860
VL - 1160
SP - 311
EP - 318
JO - Journal of Molecular Structure
JF - Journal of Molecular Structure
ER -