Abstract
In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of ∼30 cm2/Vs, on/off ratio of 105 and threshold voltage of 5 V.
Original language | English |
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Pages (from-to) | 1162-1165 |
Number of pages | 4 |
Journal | Proceedings of International Meeting on Information Display |
Volume | 2006 |
State | Published - 2006 |
Event | IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of Duration: 22 Aug 2006 → 25 Aug 2006 |