Fabrication of excimer laser annealed poly-Si thin film transistor using polymer substrates

Soo Hee Kang; Yong Hoon Kim; Jin Woo Han; Dae Shik Seo; Jeong In Han

Fabrication of excimer laser annealed poly-Si thin film transistor using polymer substrates

Soo Hee Kang
, Yong Hoon Kim
, Jin Woo Han
, Dae Shik Seo
, Jeong In Han

Department of Chemical and Biochemical Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of ∼30 cm²/Vs, on/off ratio of 10⁵ and threshold voltage of 5 V.

Original language	English
Pages (from-to)	1162-1165
Number of pages	4
Journal	Proceedings of International Meeting on Information Display
Volume	2006
State	Published - 2006
Event	IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of Duration: 22 Aug 2006 → 25 Aug 2006

Cite this

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title = "Fabrication of excimer laser annealed poly-Si thin film transistor using polymer substrates",

abstract = "In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of ∼30 cm2/Vs, on/off ratio of 105 and threshold voltage of 5 V.",

author = "Kang, \{Soo Hee\} and Kim, \{Yong Hoon\} and Han, \{Jin Woo\} and Seo, \{Dae Shik\} and Han, \{Jeong In\}",

year = "2006",

language = "English",

volume = "2006",

pages = "1162--1165",

journal = "Proceedings of International Meeting on Information Display",

issn = "1738-7558",

note = "IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference ; Conference date: 22-08-2006 Through 25-08-2006",

}

TY - JOUR

T1 - Fabrication of excimer laser annealed poly-Si thin film transistor using polymer substrates

AU - Kang, Soo Hee

AU - Kim, Yong Hoon

AU - Han, Jin Woo

AU - Seo, Dae Shik

AU - Han, Jeong In

PY - 2006

Y1 - 2006

N2 - In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of ∼30 cm2/Vs, on/off ratio of 105 and threshold voltage of 5 V.

AB - In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of ∼30 cm2/Vs, on/off ratio of 105 and threshold voltage of 5 V.

UR - https://www.scopus.com/pages/publications/33846180679

M3 - Conference article

AN - SCOPUS:33846180679

SN - 1738-7558

VL - 2006

SP - 1162

EP - 1165

JO - Proceedings of International Meeting on Information Display

JF - Proceedings of International Meeting on Information Display

T2 - IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference

Y2 - 22 August 2006 through 25 August 2006

ER -

Fabrication of excimer laser annealed poly-Si thin film transistor using polymer substrates

Abstract

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