TY - GEN
T1 - Fabrication of Formamidinium Tin Halide-Based Memristors for Emerging Memory Applications
AU - Singh, Vivek Pratap
AU - Raghvendra,
AU - Pandey, Saurabh Kumar
AU - Punetha, Deepak
N1 - Publisher Copyright:
© The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2025.
PY - 2025
Y1 - 2025
N2 - The demand for next-generation memory devices with higher density and faster operational speeds is growing rapidly, driving the need for alternatives to conventional memory technologies. Tin (Sn) is considered a viable substitute for lead (Pb) in ReRAM devices; however, the oxidation of Sn to Sn4+ poses performance challenges like those faced with lead-free perovskites. In this study, we developed ReRAM devices based on formamidinium tin iodide (FASnI3) and examined their current–voltage (I–V) characteristics to demonstrate bipolar resistive switching suitable for memory applications. The electrical performance of the devices was assessed using a Keithley 4200A SCS parametric analyzer with a customized probe station. The results indicate that the devices exhibit reversible resistive switching dynamics across multiple cycles, with low set/reset voltages of −2.5/+2.5 V, a very good switching window (30), and excellent endurance over 10 K cycles.
AB - The demand for next-generation memory devices with higher density and faster operational speeds is growing rapidly, driving the need for alternatives to conventional memory technologies. Tin (Sn) is considered a viable substitute for lead (Pb) in ReRAM devices; however, the oxidation of Sn to Sn4+ poses performance challenges like those faced with lead-free perovskites. In this study, we developed ReRAM devices based on formamidinium tin iodide (FASnI3) and examined their current–voltage (I–V) characteristics to demonstrate bipolar resistive switching suitable for memory applications. The electrical performance of the devices was assessed using a Keithley 4200A SCS parametric analyzer with a customized probe station. The results indicate that the devices exhibit reversible resistive switching dynamics across multiple cycles, with low set/reset voltages of −2.5/+2.5 V, a very good switching window (30), and excellent endurance over 10 K cycles.
KW - Bipolar resistive switching
KW - FASnI
KW - Lead-free perovskite
KW - Memristor
KW - Non-volatile memory
UR - https://www.scopus.com/pages/publications/105021838068
U2 - 10.1007/978-981-95-0203-5_15
DO - 10.1007/978-981-95-0203-5_15
M3 - Conference contribution
AN - SCOPUS:105021838068
SN - 9789819502028
T3 - Lecture Notes in Electrical Engineering
SP - 175
EP - 182
BT - Advances in VLSI, Communication, and Signal Processing - Select Proceedings of the 7th International Conference, VCAS 2024
A2 - Mishra, Ram Awadh
A2 - Gupta, Santosh Kumar
A2 - Srivastava, Vaibhav Kumar
A2 - Mäkelä, Jukka
PB - Springer Science and Business Media Deutschland GmbH
T2 - 7th International Conference on VLSI, Communication, and Signal processing, VCAS 2024
Y2 - 25 October 2024 through 27 October 2024
ER -