Fabrication of high-density arrays of individually isolated nanocapacitors using anodic aluminum oxide templates and carbon nanotubes

Jung Inn Sohn; Youn Su Kim; Chunghee Nam; B. K. Cho; Tae Yeon Seong; Seonghoon Lee

doi:10.1063/1.2048815

Fabrication of high-density arrays of individually isolated nanocapacitors using anodic aluminum oxide templates and carbon nanotubes

Jung Inn Sohn, Youn Su Kim, Chunghee Nam, B. K. Cho, Tae Yeon Seong, Seonghoon Lee

Department of Physics

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61 Scopus citations

Abstract

We have fabricated high-density arrays of individually isolated semispherical nanocapacitors consisting of porous anodic aluminum oxide (AAO) layers as dielectric materials and carbon nanotubes (CNTs) as electrodes. It is shown that the nanocapacitors made with the CNT electrodes exhibit much better C-V behaviors than those without the CNT electrodes. The improved electrical behavior is explained in terms of the use of the CNT electrodes deposited within the porous AAO layers. The capacitance calculated using semispherical capacitor formula is in agreement with the experimental value.

Original language	English
Article number	123115
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	12
DOIs	https://doi.org/10.1063/1.2048815
State	Published - 19 Sep 2005

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abstract = "We have fabricated high-density arrays of individually isolated semispherical nanocapacitors consisting of porous anodic aluminum oxide (AAO) layers as dielectric materials and carbon nanotubes (CNTs) as electrodes. It is shown that the nanocapacitors made with the CNT electrodes exhibit much better C-V behaviors than those without the CNT electrodes. The improved electrical behavior is explained in terms of the use of the CNT electrodes deposited within the porous AAO layers. The capacitance calculated using semispherical capacitor formula is in agreement with the experimental value.",

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AU - Sohn, Jung Inn

AU - Kim, Youn Su

AU - Nam, Chunghee

AU - Cho, B. K.

AU - Seong, Tae Yeon

AU - Lee, Seonghoon

PY - 2005/9/19

Y1 - 2005/9/19

N2 - We have fabricated high-density arrays of individually isolated semispherical nanocapacitors consisting of porous anodic aluminum oxide (AAO) layers as dielectric materials and carbon nanotubes (CNTs) as electrodes. It is shown that the nanocapacitors made with the CNT electrodes exhibit much better C-V behaviors than those without the CNT electrodes. The improved electrical behavior is explained in terms of the use of the CNT electrodes deposited within the porous AAO layers. The capacitance calculated using semispherical capacitor formula is in agreement with the experimental value.

AB - We have fabricated high-density arrays of individually isolated semispherical nanocapacitors consisting of porous anodic aluminum oxide (AAO) layers as dielectric materials and carbon nanotubes (CNTs) as electrodes. It is shown that the nanocapacitors made with the CNT electrodes exhibit much better C-V behaviors than those without the CNT electrodes. The improved electrical behavior is explained in terms of the use of the CNT electrodes deposited within the porous AAO layers. The capacitance calculated using semispherical capacitor formula is in agreement with the experimental value.

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Fabrication of high-density arrays of individually isolated nanocapacitors using anodic aluminum oxide templates and carbon nanotubes

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