Fabrication of midinfrared quantum cascade laser via oxygen-enhanced nonselective wet thermal oxidation

C. S. Seibert; M. D'Souza; J. C. Shin; L. J. Mawst; D. Botez; D. C. Hall

doi:10.1063/1.3544489

Fabrication of midinfrared quantum cascade laser via oxygen-enhanced nonselective wet thermal oxidation

C. S. Seibert, M. D'Souza, J. C. Shin, L. J. Mawst, D. Botez, D. C. Hall

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A native oxide confined quantum cascade laser operating at λ=5.4 μm was fabricated using oxygen-enhanced nonselective wet thermal oxidation. This process formed an insulating native oxide on the lattice matched In _0.53 Ga_0.47 As waveguide core layers and the strain compensated InAlAs/InGaAs active core region after oxidation at 500 °C with 0.7% O₂ added relative to the N₂ water vapor carrier gas. A device with a threshold current density of Jth =3.2 kA/cm² was realized.

Original language	English
Article number	033103
Journal	Journal of Applied Physics
Volume	109
Issue number	3
DOIs	https://doi.org/10.1063/1.3544489
State	Published - 1 Feb 2011

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abstract = "A native oxide confined quantum cascade laser operating at λ=5.4 μm was fabricated using oxygen-enhanced nonselective wet thermal oxidation. This process formed an insulating native oxide on the lattice matched In 0.53 Ga0.47 As waveguide core layers and the strain compensated InAlAs/InGaAs active core region after oxidation at 500 °C with 0.7% O2 added relative to the N2 water vapor carrier gas. A device with a threshold current density of Jth =3.2 kA/cm2 was realized.",

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AU - Shin, J. C.

AU - Mawst, L. J.

AU - Botez, D.

AU - Hall, D. C.

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Y1 - 2011/2/1

N2 - A native oxide confined quantum cascade laser operating at λ=5.4 μm was fabricated using oxygen-enhanced nonselective wet thermal oxidation. This process formed an insulating native oxide on the lattice matched In 0.53 Ga0.47 As waveguide core layers and the strain compensated InAlAs/InGaAs active core region after oxidation at 500 °C with 0.7% O2 added relative to the N2 water vapor carrier gas. A device with a threshold current density of Jth =3.2 kA/cm2 was realized.

AB - A native oxide confined quantum cascade laser operating at λ=5.4 μm was fabricated using oxygen-enhanced nonselective wet thermal oxidation. This process formed an insulating native oxide on the lattice matched In 0.53 Ga0.47 As waveguide core layers and the strain compensated InAlAs/InGaAs active core region after oxidation at 500 °C with 0.7% O2 added relative to the N2 water vapor carrier gas. A device with a threshold current density of Jth =3.2 kA/cm2 was realized.

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Fabrication of midinfrared quantum cascade laser via oxygen-enhanced nonselective wet thermal oxidation

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