Fabrication of nano-wedge resistive switching memory and analysis on its switching characteristics

Dong Keun Lee, Sungjun Kim, Min Hwi Kim, Suhyun Bang, Tae Hyeon Kim, Byung Gook Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Nano-wedge structured resistive switching memory is fabricated through modifying bottom electrode structure and the DC characteristics of devices are analyzed. Excellent data storage capability is proved through retention test by setting at high temperature over 104 seconds in both low and high resistance states (LRS and HRS). Endurance test is also performed to demonstrate outstanding characteristics of the resistive switching memory device.

Original languageEnglish
Title of host publication2017 Silicon Nanoelectronics Workshop, SNW 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages55-56
Number of pages2
ISBN (Electronic)9784863486478
DOIs
StatePublished - 29 Dec 2017
Event22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan
Duration: 4 Jun 20175 Jun 2017

Publication series

Name2017 Silicon Nanoelectronics Workshop, SNW 2017
Volume2017-January

Conference

Conference22nd Silicon Nanoelectronics Workshop, SNW 2017
Country/TerritoryJapan
CityKyoto
Period4/06/175/06/17

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