@inproceedings{002829d7dc934ea599b056689f502123,
title = "Fabrication of nano-wedge resistive switching memory and analysis on its switching characteristics",
abstract = "Nano-wedge structured resistive switching memory is fabricated through modifying bottom electrode structure and the DC characteristics of devices are analyzed. Excellent data storage capability is proved through retention test by setting at high temperature over 104 seconds in both low and high resistance states (LRS and HRS). Endurance test is also performed to demonstrate outstanding characteristics of the resistive switching memory device.",
author = "Lee, {Dong Keun} and Sungjun Kim and Kim, {Min Hwi} and Suhyun Bang and Kim, {Tae Hyeon} and Park, {Byung Gook}",
note = "Publisher Copyright: {\textcopyright} 2017 JSAP.; 22nd Silicon Nanoelectronics Workshop, SNW 2017 ; Conference date: 04-06-2017 Through 05-06-2017",
year = "2017",
month = dec,
day = "29",
doi = "10.23919/SNW.2017.8242294",
language = "English",
series = "2017 Silicon Nanoelectronics Workshop, SNW 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "55--56",
booktitle = "2017 Silicon Nanoelectronics Workshop, SNW 2017",
address = "United States",
}