Fabrication of SiC MESFET's for microwave applications

Ji Hak Jung; Hoon Park; Jin Kuk Park; Hyun Chang Park; Kwang Hyuk Bae; Dong Hyuk Shin; Nam Jin Song; Jin Wook Burm

doi:10.3938/jkps.40.588

Fabrication of SiC MESFET's for microwave applications

Ji Hak Jung, Hoon Park, Jin Kuk Park, Hyun Chang Park, Kwang Hyuk Bae, Dong Hyuk Shin, Nam Jin Song, Jin Wook Burm

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

4H-SiC MESFET's on conducting substrates were designed, fabricated, and DC characterized. An inductively coupled plasma etcher was developed and used for the channel recess etching of the MESFET. Fabricated MESFET's with 1-μm gate lengths and 100-μm gate widths showed a very high drain current density of 980 mA/mm and a maximum transconductance of 35 mS/mm, indicating a high potential for microwave power applications.

Original language	English
Pages (from-to)	588-591
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	40
Issue number	4
DOIs	https://doi.org/10.3938/jkps.40.588
State	Published - Apr 2002

Keywords

MESFET
Microwave
SiC

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10.3938/jkps.40.588

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title = "Fabrication of SiC MESFET's for microwave applications",

abstract = "4H-SiC MESFET's on conducting substrates were designed, fabricated, and DC characterized. An inductively coupled plasma etcher was developed and used for the channel recess etching of the MESFET. Fabricated MESFET's with 1-μm gate lengths and 100-μm gate widths showed a very high drain current density of 980 mA/mm and a maximum transconductance of 35 mS/mm, indicating a high potential for microwave power applications.",

keywords = "MESFET, Microwave, SiC",

author = "Jung, {Ji Hak} and Hoon Park and Park, {Jin Kuk} and Park, {Hyun Chang} and Bae, {Kwang Hyuk} and Shin, {Dong Hyuk} and Song, {Nam Jin} and Burm, {Jin Wook}",

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TY - JOUR

T1 - Fabrication of SiC MESFET's for microwave applications

AU - Jung, Ji Hak

AU - Park, Hoon

AU - Park, Jin Kuk

AU - Park, Hyun Chang

AU - Bae, Kwang Hyuk

AU - Shin, Dong Hyuk

AU - Song, Nam Jin

AU - Burm, Jin Wook

PY - 2002/4

Y1 - 2002/4

N2 - 4H-SiC MESFET's on conducting substrates were designed, fabricated, and DC characterized. An inductively coupled plasma etcher was developed and used for the channel recess etching of the MESFET. Fabricated MESFET's with 1-μm gate lengths and 100-μm gate widths showed a very high drain current density of 980 mA/mm and a maximum transconductance of 35 mS/mm, indicating a high potential for microwave power applications.

AB - 4H-SiC MESFET's on conducting substrates were designed, fabricated, and DC characterized. An inductively coupled plasma etcher was developed and used for the channel recess etching of the MESFET. Fabricated MESFET's with 1-μm gate lengths and 100-μm gate widths showed a very high drain current density of 980 mA/mm and a maximum transconductance of 35 mS/mm, indicating a high potential for microwave power applications.

KW - MESFET

KW - Microwave

KW - SiC

UR - http://www.scopus.com/inward/record.url?scp=0036012666&partnerID=8YFLogxK

U2 - 10.3938/jkps.40.588

DO - 10.3938/jkps.40.588

M3 - Article

AN - SCOPUS:0036012666

SN - 0374-4884

VL - 40

SP - 588

EP - 591

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 4

ER -

Fabrication of SiC MESFET's for microwave applications

Abstract

Keywords

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