Abstract
This paper presents the experimental results of a line of work from MMIC design, fabrication, module packaging, and measurement, to system demonstration for the next generation 60 GHz wideband wireless communications systems. We fabricated power amplifier (PA) and up-mixer monolithic microwave integrated circuits (MMICs') and their modules for the application of 60 GHz mobile broadband system (MBS) transmitter. The device technologies for the transmitter MMICs' are ETRI's own 0.15 μm gate-length GaAs pseudomorphic high electron mobility transistor (PHEMT) for PA MMIC and 0.2 μm gate-length metamorphic HEMT (MHEMT) for up-mixer MMIC, The output power at 1-dB gain compression point, P1dB, of the 4-stage PA is higher than 16 dBm and the gain higher than 12.4 dB for 58 ∼ 62 GHz. For 60 GHz up-mixer the conversion gain is higher than - 12 dB and the output P1dB is higher than - 12.85 dBm for 57 ∼ 70 GHz. The modules of PA (40 × 30 × 15 mm3) and up-mixer (46 × 30 × 15 mm3) were made for the transmission test on the 60 GHz MBS test system and the 60 GHz wireless transmission test was successfully demonstrated.
| Original language | English |
|---|---|
| Pages (from-to) | S352-S356 |
| Journal | Journal of the Korean Physical Society |
| Volume | 42 |
| Issue number | SPEC. |
| State | Published - Feb 2003 |
| Event | Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 20 Aug 2002 → 23 Aug 2002 |
Keywords
- 60 GHz up-converter
- GaAs
- MHEMT
- MMIC
- PHEMT