Fabrication perspective of Fe3O4-based cross-cell memristive device for synaptic applications

Neurotransmitter release in chemical synapses plays a pivotal role in a wide range of essential brain functions, including neural activity (potentiation/depression), learning, cognition, emotion, perception, and consciousness. In this study, we have presented the fabricated cross-cell memristive device that exhibits an analog resistive switching (ARS) device, with Silver (Ag) as active and Platinum (Pt) as inert metal electrodes. The energy bandgap, crystal structure, surface morphology, elemental composition, and electronic properties of the deposited metal-oxide thin film were examined by using UV–Vis spectroscopy, Glancing Angle X-ray diffraction (GAXRD), Field Emission Scanning Electron Microscopy (FESEM), Energy Dispersive X-ray (EDX), and Raman spectroscopy, respectively. The electrical characteristics of the fabricated resistive switching (RS) device have been studied by the Keithley 4200A SCS parameter analyzer by low triangular DC sweep voltage (-2V/+2V) at room temperature (RT). Furthermore, we have evaluated the outstanding performance of the fabricated cross-cell RS device at a read voltage of 0.1V, and we have also discussed its remarkable linearity. This work will aid researchers in realizing the synaptic behavior of cross-cell devices for neuromorphic computing applications.