Facile fabrication of high-performance InGaZnO thin film transistor using hydrogen ion irradiation at room temperature

Byung Du Ahn, Jin Seong Park, K. B. Chung

Research output: Contribution to journalArticlepeer-review

40 Scopus citations

Abstract

Device performance of InGaZnO (IGZO) thin film transistors (TFTs) are investigated as a function of hydrogen ion irradiation dose at room temperature. Field effect mobility is enhanced, and subthreshold gate swing is improved with the increase of hydrogen ion irradiation dose, and there is no thermal annealing. The electrical device performance is correlated with the electronic structure of IGZO films, such as chemical bonding states, features of the conduction band, and band edge states below the conduction band. The decrease of oxygen deficient bonding and the changes in electronic structure of the conduction band leads to the improvement of device performance in IGZO TFT with an increase of the hydrogen ion irradiation dose.

Original languageEnglish
Article number163505
JournalApplied Physics Letters
Volume105
Issue number16
DOIs
StatePublished - 20 Oct 2014

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