Failure mechanism for metalorganic vapor deposition of (Ba,Sr)TiO 3/Ru/Ti(ON) capacitor stacks

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We investigate the failure mechanism of a Pt/BST/Ru/Ti(ON)/TiSi 2 capacitor structure prepared at temperatures from room temperature to 650°C in an O 2 ambient. From the X-ray diffraction and the Auger electron spectroscopy analyses, the Ti(ON) diffusion barriers are shown to be completely oxidized to the Rutile phase with the resulting structural collapse during the deposition process for the BST films at 650°C in an O 2 ambient. The volume expansion of the TiO 2 layer gives rise to peel-off of the capacitor stack atop the Ru layer and promotes Ru-silicidation by interdiffusion between the Ru and the poly-Si layer through the collapsed TiO 2.

Original languageEnglish
Pages (from-to)359-363
Number of pages5
JournalJournal of the Korean Physical Society
Volume47
Issue number2
StatePublished - Aug 2005

Keywords

  • BST
  • Failure mechanism
  • Oxidation

Fingerprint

Dive into the research topics of 'Failure mechanism for metalorganic vapor deposition of (Ba,Sr)TiO 3/Ru/Ti(ON) capacitor stacks'. Together they form a unique fingerprint.

Cite this