Fast and stable solution-processed transparent oxide thin-film transistor circuits

Fast and stable zinctinoxide (ZTO) thin-film transistor (TFT) circuits were fabricated by simple and effective solution processing. The solution-processed ZTO TFTs have shown saturation mobility > 2.5 ± 0.29 cm²/ V ċ s (W/L = 100/10 μm) and subthreshold slope < 0.4 ± 0.122 V/dec. The ZTO seven-stage ring oscillators have shown an oscillation frequency of ∼800 kHz with a supply voltage V_DD = 60 V, corresponding to a propagation delay of < 90 ns per stage. In addition, with appropriate passivation onto the semiconductor channel area, the circuits have shown relatively stable operation even at a gate and source/drain bias voltage of > 50 V for several hours.