Ferroelectric polarization-induced memristive hysteresis behaviors in Ti- and Mn-codoped ZnO

Namhyun An; Hwauk Lee; Sanjeev K. Sharma; Youngmin Lee; Deuk Young Kim; Sejoon Lee

doi:10.3938/jkps.68.869

Ferroelectric polarization-induced memristive hysteresis behaviors in Ti- and Mn-codoped ZnO

Namhyun An
, Hwauk Lee
, Sanjeev K. Sharma
, Youngmin Lee
, Deuk Young Kim
, Sejoon Lee

Division of System Semiconductor

Dongguk University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

ZnTiMnO layers grown on Pt (111)/A_l2O₃ (0001) substrates exhibit lattice displacement-induced ferroelectric features, which arise from a modulation in the lattice translation symmetry and originate from the substitution of Ti and Mn ions at Zn sites in ZnO’s host lattices. After annealing at 900°C, the ZnTiMnO layer shows a clear hysteresis loop, where the maximum polarization is fully saturated within wide electric-field regions. The top-to-bottom Pt/ZnTiMnO/Pt device reveals a polarization-dependent asymmetric hysteresis (i.e., ferroelectric memristive-switching); in addition, the device shows > 60% data-retention per 10 years. These results suggest that ZnTiMnO holds great promise for use in ferroelectric memristive-switching devices.

Original language	English
Pages (from-to)	869-874
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	68
Issue number	7
DOIs	https://doi.org/10.3938/jkps.68.869
State	Published - 1 Apr 2016

Keywords

Ferroelectric hysteresis
Polarization-dependent memristive behavior
Ti- and Mn-codoped ZnO

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10.3938/jkps.68.869

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title = "Ferroelectric polarization-induced memristive hysteresis behaviors in Ti- and Mn-codoped ZnO",

abstract = "ZnTiMnO layers grown on Pt (111)/Al2O3 (0001) substrates exhibit lattice displacement-induced ferroelectric features, which arise from a modulation in the lattice translation symmetry and originate from the substitution of Ti and Mn ions at Zn sites in ZnO{\textquoteright}s host lattices. After annealing at 900°C, the ZnTiMnO layer shows a clear hysteresis loop, where the maximum polarization is fully saturated within wide electric-field regions. The top-to-bottom Pt/ZnTiMnO/Pt device reveals a polarization-dependent asymmetric hysteresis (i.e., ferroelectric memristive-switching); in addition, the device shows > 60\% data-retention per 10 years. These results suggest that ZnTiMnO holds great promise for use in ferroelectric memristive-switching devices.",

keywords = "Ferroelectric hysteresis, Polarization-dependent memristive behavior, Ti- and Mn-codoped ZnO",

author = "Namhyun An and Hwauk Lee and Sharma, \{Sanjeev K.\} and Youngmin Lee and Kim, \{Deuk Young\} and Sejoon Lee",

note = "Publisher Copyright: {\textcopyright} 2016, The Korean Physical Society.",

year = "2016",

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day = "1",

doi = "10.3938/jkps.68.869",

language = "English",

volume = "68",

pages = "869--874",

journal = "Journal of the Korean Physical Society",

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}

TY - JOUR

T1 - Ferroelectric polarization-induced memristive hysteresis behaviors in Ti- and Mn-codoped ZnO

AU - An, Namhyun

AU - Lee, Hwauk

AU - Sharma, Sanjeev K.

AU - Lee, Youngmin

AU - Kim, Deuk Young

AU - Lee, Sejoon

PY - 2016/4/1

Y1 - 2016/4/1

N2 - ZnTiMnO layers grown on Pt (111)/Al2O3 (0001) substrates exhibit lattice displacement-induced ferroelectric features, which arise from a modulation in the lattice translation symmetry and originate from the substitution of Ti and Mn ions at Zn sites in ZnO’s host lattices. After annealing at 900°C, the ZnTiMnO layer shows a clear hysteresis loop, where the maximum polarization is fully saturated within wide electric-field regions. The top-to-bottom Pt/ZnTiMnO/Pt device reveals a polarization-dependent asymmetric hysteresis (i.e., ferroelectric memristive-switching); in addition, the device shows > 60% data-retention per 10 years. These results suggest that ZnTiMnO holds great promise for use in ferroelectric memristive-switching devices.

AB - ZnTiMnO layers grown on Pt (111)/Al2O3 (0001) substrates exhibit lattice displacement-induced ferroelectric features, which arise from a modulation in the lattice translation symmetry and originate from the substitution of Ti and Mn ions at Zn sites in ZnO’s host lattices. After annealing at 900°C, the ZnTiMnO layer shows a clear hysteresis loop, where the maximum polarization is fully saturated within wide electric-field regions. The top-to-bottom Pt/ZnTiMnO/Pt device reveals a polarization-dependent asymmetric hysteresis (i.e., ferroelectric memristive-switching); in addition, the device shows > 60% data-retention per 10 years. These results suggest that ZnTiMnO holds great promise for use in ferroelectric memristive-switching devices.

KW - Ferroelectric hysteresis

KW - Polarization-dependent memristive behavior

KW - Ti- and Mn-codoped ZnO

UR - https://www.scopus.com/pages/publications/84962853152

U2 - 10.3938/jkps.68.869

DO - 10.3938/jkps.68.869

M3 - Article

AN - SCOPUS:84962853152

SN - 0374-4884

VL - 68

SP - 869

EP - 874

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 7

ER -

Ferroelectric polarization-induced memristive hysteresis behaviors in Ti- and Mn-codoped ZnO

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Keywords

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