Ferromagnetic Properties of Five-Period InGaMnAs/GaAs Quantum Well Structure

Young H. Kwon; Sejoon Lee; Woochul Yang; Chang Soo Park; Im Taek Yoon

doi:10.1007/s11664-016-5036-x

Ferromagnetic Properties of Five-Period InGaMnAs/GaAs Quantum Well Structure

Young H. Kwon, Sejoon Lee, Woochul Yang, Chang Soo Park, Im Taek Yoon

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Abstract

The effect of Mn was investigated in a synthesized multilayer system made up of five layers of InMnGaAs/GaAs quantum well (QW) grown on semi-insulating (100)-oriented substrates prepared by low-temperature molecular beam epitaxy. Magnetic moment measurements on a superconducting quantum interference device magnetometer revealed the presence of ferromagnetism with a Curie temperature above room temperature in a five-layer InGaMnAs/GaAs QW structure in a GaAs matrix. X-ray diffraction and secondary ion mass spectroscopy measurements powerfully confirmed the second phase founding of ferromagnetic GaMn and MnAs clusters. The ferromagnetism existing in five layers of InMnGaAs/GaAs QW is not intrinsic, but extrinsic due to the presence of Mn dopant clusters such as GaMn and MnAs clusters.

Original language	English
Pages (from-to)	3917-3921
Number of pages	5
Journal	Journal of Electronic Materials
Volume	46
Issue number	7
DOIs	https://doi.org/10.1007/s11664-016-5036-x
State	Published - 1 Jul 2017

Keywords

clusters
ferromagnetism
molecular beam epitaxy
Quantum wells

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title = "Ferromagnetic Properties of Five-Period InGaMnAs/GaAs Quantum Well Structure",

abstract = "The effect of Mn was investigated in a synthesized multilayer system made up of five layers of InMnGaAs/GaAs quantum well (QW) grown on semi-insulating (100)-oriented substrates prepared by low-temperature molecular beam epitaxy. Magnetic moment measurements on a superconducting quantum interference device magnetometer revealed the presence of ferromagnetism with a Curie temperature above room temperature in a five-layer InGaMnAs/GaAs QW structure in a GaAs matrix. X-ray diffraction and secondary ion mass spectroscopy measurements powerfully confirmed the second phase founding of ferromagnetic GaMn and MnAs clusters. The ferromagnetism existing in five layers of InMnGaAs/GaAs QW is not intrinsic, but extrinsic due to the presence of Mn dopant clusters such as GaMn and MnAs clusters.",

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AU - Kwon, Young H.

AU - Lee, Sejoon

AU - Yang, Woochul

AU - Park, Chang Soo

AU - Yoon, Im Taek

PY - 2017/7/1

Y1 - 2017/7/1

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AB - The effect of Mn was investigated in a synthesized multilayer system made up of five layers of InMnGaAs/GaAs quantum well (QW) grown on semi-insulating (100)-oriented substrates prepared by low-temperature molecular beam epitaxy. Magnetic moment measurements on a superconducting quantum interference device magnetometer revealed the presence of ferromagnetism with a Curie temperature above room temperature in a five-layer InGaMnAs/GaAs QW structure in a GaAs matrix. X-ray diffraction and secondary ion mass spectroscopy measurements powerfully confirmed the second phase founding of ferromagnetic GaMn and MnAs clusters. The ferromagnetism existing in five layers of InMnGaAs/GaAs QW is not intrinsic, but extrinsic due to the presence of Mn dopant clusters such as GaMn and MnAs clusters.

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Ferromagnetic Properties of Five-Period InGaMnAs/GaAs Quantum Well Structure

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