Ferromagnetic Properties of Five-Period InGaMnAs/GaAs Quantum Well Structure

Young H. Kwon; Sejoon Lee; Woochul Yang; Chang Soo Park; Im Taek Yoon

doi:10.1007/s11664-016-5036-x

Ferromagnetic Properties of Five-Period InGaMnAs/GaAs Quantum Well Structure

Young H. Kwon
, Sejoon Lee
, Woochul Yang
, Chang Soo Park
, Im Taek Yoon

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The effect of Mn was investigated in a synthesized multilayer system made up of five layers of InMnGaAs/GaAs quantum well (QW) grown on semi-insulating (100)-oriented substrates prepared by low-temperature molecular beam epitaxy. Magnetic moment measurements on a superconducting quantum interference device magnetometer revealed the presence of ferromagnetism with a Curie temperature above room temperature in a five-layer InGaMnAs/GaAs QW structure in a GaAs matrix. X-ray diffraction and secondary ion mass spectroscopy measurements powerfully confirmed the second phase founding of ferromagnetic GaMn and MnAs clusters. The ferromagnetism existing in five layers of InMnGaAs/GaAs QW is not intrinsic, but extrinsic due to the presence of Mn dopant clusters such as GaMn and MnAs clusters.

Original language	English
Pages (from-to)	3917-3921
Number of pages	5
Journal	Journal of Electronic Materials
Volume	46
Issue number	7
DOIs	https://doi.org/10.1007/s11664-016-5036-x
State	Published - 1 Jul 2017

Keywords

clusters
ferromagnetism
molecular beam epitaxy
Quantum wells

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10.1007/s11664-016-5036-x

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title = "Ferromagnetic Properties of Five-Period InGaMnAs/GaAs Quantum Well Structure",

abstract = "The effect of Mn was investigated in a synthesized multilayer system made up of five layers of InMnGaAs/GaAs quantum well (QW) grown on semi-insulating (100)-oriented substrates prepared by low-temperature molecular beam epitaxy. Magnetic moment measurements on a superconducting quantum interference device magnetometer revealed the presence of ferromagnetism with a Curie temperature above room temperature in a five-layer InGaMnAs/GaAs QW structure in a GaAs matrix. X-ray diffraction and secondary ion mass spectroscopy measurements powerfully confirmed the second phase founding of ferromagnetic GaMn and MnAs clusters. The ferromagnetism existing in five layers of InMnGaAs/GaAs QW is not intrinsic, but extrinsic due to the presence of Mn dopant clusters such as GaMn and MnAs clusters.",

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author = "Kwon, \{Young H.\} and Sejoon Lee and Woochul Yang and Park, \{Chang Soo\} and Yoon, \{Im Taek\}",

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doi = "10.1007/s11664-016-5036-x",

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T1 - Ferromagnetic Properties of Five-Period InGaMnAs/GaAs Quantum Well Structure

AU - Kwon, Young H.

AU - Lee, Sejoon

AU - Yang, Woochul

AU - Park, Chang Soo

AU - Yoon, Im Taek

PY - 2017/7/1

Y1 - 2017/7/1

N2 - The effect of Mn was investigated in a synthesized multilayer system made up of five layers of InMnGaAs/GaAs quantum well (QW) grown on semi-insulating (100)-oriented substrates prepared by low-temperature molecular beam epitaxy. Magnetic moment measurements on a superconducting quantum interference device magnetometer revealed the presence of ferromagnetism with a Curie temperature above room temperature in a five-layer InGaMnAs/GaAs QW structure in a GaAs matrix. X-ray diffraction and secondary ion mass spectroscopy measurements powerfully confirmed the second phase founding of ferromagnetic GaMn and MnAs clusters. The ferromagnetism existing in five layers of InMnGaAs/GaAs QW is not intrinsic, but extrinsic due to the presence of Mn dopant clusters such as GaMn and MnAs clusters.

AB - The effect of Mn was investigated in a synthesized multilayer system made up of five layers of InMnGaAs/GaAs quantum well (QW) grown on semi-insulating (100)-oriented substrates prepared by low-temperature molecular beam epitaxy. Magnetic moment measurements on a superconducting quantum interference device magnetometer revealed the presence of ferromagnetism with a Curie temperature above room temperature in a five-layer InGaMnAs/GaAs QW structure in a GaAs matrix. X-ray diffraction and secondary ion mass spectroscopy measurements powerfully confirmed the second phase founding of ferromagnetic GaMn and MnAs clusters. The ferromagnetism existing in five layers of InMnGaAs/GaAs QW is not intrinsic, but extrinsic due to the presence of Mn dopant clusters such as GaMn and MnAs clusters.

KW - clusters

KW - ferromagnetism

KW - molecular beam epitaxy

KW - Quantum wells

UR - https://www.scopus.com/pages/publications/84992146016

U2 - 10.1007/s11664-016-5036-x

DO - 10.1007/s11664-016-5036-x

M3 - Article

AN - SCOPUS:84992146016

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SP - 3917

EP - 3921

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 7

ER -

Ferromagnetic Properties of Five-Period InGaMnAs/GaAs Quantum Well Structure

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