Flatband voltage characteristics of Hf-incorporated Y2O 3/strained-Si gate stacks with Au, Pt, and Ni metal gates

C. Mahata; T. Das; S. Mallik; M. K. Hota; S. Varma; C. K. Maiti

doi:10.1149/1.3516638

Flatband voltage characteristics of Hf-incorporated Y₂O ₃/strained-Si gate stacks with Au, Pt, and Ni metal gates

C. Mahata, T. Das, S. Mallik, M. K. Hota, S. Varma, C. K. Maiti

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

HfY O_x gate dielectric has been deposited on strained- Si/ Si_0.8 Ge_0.2 by radio frequency cosputtering of Hf O ₂/Y₂ O₃ targets. Compositional, chemical, and electrical properties have been studied using X-ray photoelectron spectroscopy, X-ray diffraction, capacitance-voltage (C_-V), and current-voltage measurements. O1s spectra shows a minimum defect due to M (Hf or Y)-OH and the bandgap was found ∼4.9±0.05 eV. The measured Δ V_FB and hysteresis in high frequency ^C-V characteristics are used to study the pre-existing traps in the dielectric. Trapping kinetics as a function of stress time of (Au,Pt,Ni) /HfY O_x /strained-Si/ Si_0.8 Ge_0.2 have been investigated under low field (∼1.6 MV/cm) from Δ V_FB and Δ Gpeak.

Original language	English
Pages (from-to)	H80-H83
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	2
DOIs	https://doi.org/10.1149/1.3516638
State	Published - 2011

Access to Document

10.1149/1.3516638

Cite this

@article{92361211dd5546faa506f0ccb9fef79d,

title = "Flatband voltage characteristics of Hf-incorporated Y2O 3/strained-Si gate stacks with Au, Pt, and Ni metal gates",

abstract = "HfY Ox gate dielectric has been deposited on strained- Si/ Si0.8 Ge0.2 by radio frequency cosputtering of Hf O 2/Y2 O3 targets. Compositional, chemical, and electrical properties have been studied using X-ray photoelectron spectroscopy, X-ray diffraction, capacitance-voltage (C-V), and current-voltage measurements. O1s spectra shows a minimum defect due to M (Hf or Y)-OH and the bandgap was found ∼4.9±0.05 eV. The measured Δ VFB and hysteresis in high frequency C-V characteristics are used to study the pre-existing traps in the dielectric. Trapping kinetics as a function of stress time of (Au,Pt,Ni) /HfY Ox /strained-Si/ Si0.8 Ge0.2 have been investigated under low field (∼1.6 MV/cm) from Δ VFB and Δ Gpeak.",

author = "C. Mahata and T. Das and S. Mallik and Hota, {M. K.} and S. Varma and Maiti, {C. K.}",

year = "2011",

doi = "10.1149/1.3516638",

language = "English",

volume = "14",

pages = "H80--H83",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "2",

}

TY - JOUR

T1 - Flatband voltage characteristics of Hf-incorporated Y2O 3/strained-Si gate stacks with Au, Pt, and Ni metal gates

AU - Mahata, C.

AU - Das, T.

AU - Mallik, S.

AU - Hota, M. K.

AU - Varma, S.

AU - Maiti, C. K.

PY - 2011

Y1 - 2011

N2 - HfY Ox gate dielectric has been deposited on strained- Si/ Si0.8 Ge0.2 by radio frequency cosputtering of Hf O 2/Y2 O3 targets. Compositional, chemical, and electrical properties have been studied using X-ray photoelectron spectroscopy, X-ray diffraction, capacitance-voltage (C-V), and current-voltage measurements. O1s spectra shows a minimum defect due to M (Hf or Y)-OH and the bandgap was found ∼4.9±0.05 eV. The measured Δ VFB and hysteresis in high frequency C-V characteristics are used to study the pre-existing traps in the dielectric. Trapping kinetics as a function of stress time of (Au,Pt,Ni) /HfY Ox /strained-Si/ Si0.8 Ge0.2 have been investigated under low field (∼1.6 MV/cm) from Δ VFB and Δ Gpeak.

AB - HfY Ox gate dielectric has been deposited on strained- Si/ Si0.8 Ge0.2 by radio frequency cosputtering of Hf O 2/Y2 O3 targets. Compositional, chemical, and electrical properties have been studied using X-ray photoelectron spectroscopy, X-ray diffraction, capacitance-voltage (C-V), and current-voltage measurements. O1s spectra shows a minimum defect due to M (Hf or Y)-OH and the bandgap was found ∼4.9±0.05 eV. The measured Δ VFB and hysteresis in high frequency C-V characteristics are used to study the pre-existing traps in the dielectric. Trapping kinetics as a function of stress time of (Au,Pt,Ni) /HfY Ox /strained-Si/ Si0.8 Ge0.2 have been investigated under low field (∼1.6 MV/cm) from Δ VFB and Δ Gpeak.

UR - http://www.scopus.com/inward/record.url?scp=78951473757&partnerID=8YFLogxK

U2 - 10.1149/1.3516638

DO - 10.1149/1.3516638

M3 - Article

AN - SCOPUS:78951473757

SN - 1099-0062

VL - 14

SP - H80-H83

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 2

ER -

Flatband voltage characteristics of Hf-incorporated Y₂O ₃/strained-Si gate stacks with Au, Pt, and Ni metal gates

Abstract

Access to Document

Other files and links

Fingerprint

Cite this