Flexible amorphous indium-Tin-zinc oxide (a-ITZO) thin-film transistors on polyimide substrate

Dae Gyu Yang, Jong Heon Kim, Hyoung Do Kim, Hyun Suk Kim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The amorphous Indium-Tin-Zinc Oxide (a-ITZO) was fabricated by using direct-current (DC) sputtering method. Electrical and chemical properties of a-ITZO thin film transistors (TFTs) fabricated on the polyimide (PI) substrate were investigated. The a-ITZO TFTs on the PI substrate exhibited the saturation field effect mobility of 8.93 cm2/Vs, subthreshold swing of 0.38 V/decade and high on/off current ratio of ∼ 108. Stability under the negative bias stress (NBS), negative bias illumination stress (NBIS) and positive bias stress (PBS) was evaluated.

Original languageEnglish
Title of host publicationAM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages165-168
Number of pages4
ISBN (Electronic)9784990875336
StatePublished - 8 Aug 2017
Event24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 - Kyoto, Japan
Duration: 4 Jul 20177 Jul 2017

Publication series

NameAM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Conference

Conference24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017
Country/TerritoryJapan
CityKyoto
Period4/07/177/07/17

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