@inproceedings{739419c77f4e42199b2d84f172726bca,
title = "Flexible amorphous indium-Tin-zinc oxide (a-ITZO) thin-film transistors on polyimide substrate",
abstract = "The amorphous Indium-Tin-Zinc Oxide (a-ITZO) was fabricated by using direct-current (DC) sputtering method. Electrical and chemical properties of a-ITZO thin film transistors (TFTs) fabricated on the polyimide (PI) substrate were investigated. The a-ITZO TFTs on the PI substrate exhibited the saturation field effect mobility of 8.93 cm2/Vs, subthreshold swing of 0.38 V/decade and high on/off current ratio of ∼ 108. Stability under the negative bias stress (NBS), negative bias illumination stress (NBIS) and positive bias stress (PBS) was evaluated.",
author = "Yang, {Dae Gyu} and Kim, {Jong Heon} and Kim, {Hyoung Do} and Kim, {Hyun Suk}",
year = "2017",
month = aug,
day = "8",
language = "English",
series = "AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "165--168",
booktitle = "AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices",
address = "United States",
note = "24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 ; Conference date: 04-07-2017 Through 07-07-2017",
}