Abstract
We developed new flexible metal-insulator-metal (MIM) devices subject to plastic film substrate. The structure of the MIM device is that a Ta2O5 insulator is covered with two flexible A1 electrodes on both sides. The flexible structure of the MIM device was successfully fabricated applying our own etch-free process.
Original language | English |
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Pages (from-to) | 245-248 |
Number of pages | 4 |
Journal | Current Applied Physics |
Volume | 2 |
Issue number | 3 |
DOIs | |
State | Published - 2002 |
Keywords
- Etch-free process
- Flexible electrode
- I-V characteristics
- MIM
- Symmetry