TY - JOUR
T1 - Flexible Platform Oriented
T2 - Unipolar-Type Hybrid Dual-Channel Scalable Field-Effect Phototransistors Array Based on Tellurium Nanowires and Tellurium-Film with Highly Linear Photoresponsivity
AU - Naqi, Muhammad
AU - Choi, Kyung Hwan
AU - Cho, Yongin
AU - Rho, Hyun Yeol
AU - Cho, Haewon
AU - Pujar, Pavan
AU - liu, Na
AU - Kim, Hyun Suk
AU - Choi, Jae Young
AU - Kim, Sunkook
N1 - Publisher Copyright:
© 2022 Wiley-VCH GmbH.
PY - 2022/7
Y1 - 2022/7
N2 - Here, a novel method is introduced to synthesize the uniform hybrid structure of tellurium nanowires (TeNWs) and tellurium-film (Te-film) for flexible field-effect transistor (FET) array device to exhibit excellent electrical, mechanical, and optical performance. To fabricate such a device, all the processes are performed at low temperatures (< 100 °C) with easy processing methods. The uniformity of the hybrid structure of TeNWs/Te-film is confirmed using scanning electron microscopy (SEM) and Raman spectroscopy with a comparison of the bare TeNWs-film. Electrical properties of the TeNWs/Te-based FET device exhibits high mobility of 5.35 cm2 V−1 s−1 and on/off ratio of >104 along with stable and uniform results of the transistor array device, which consists of 50 devices. The optical properties show highly linear photodetection behavior in terms of threshold voltage shift, responsivity, sensitivity, photocurrent, detectivity, and time-domain behavior. Also, the various stability tests are performed to confirm the consistency of the device in terms of positive bias stress, negative bias stress, positive bias illumination stress, long-term stability response (up to 60 days), mechanical bending stress, and the results reveal a constant and consistent behavior of the device, which can be attributed to enable wide range applications in the field of electronics devices.
AB - Here, a novel method is introduced to synthesize the uniform hybrid structure of tellurium nanowires (TeNWs) and tellurium-film (Te-film) for flexible field-effect transistor (FET) array device to exhibit excellent electrical, mechanical, and optical performance. To fabricate such a device, all the processes are performed at low temperatures (< 100 °C) with easy processing methods. The uniformity of the hybrid structure of TeNWs/Te-film is confirmed using scanning electron microscopy (SEM) and Raman spectroscopy with a comparison of the bare TeNWs-film. Electrical properties of the TeNWs/Te-based FET device exhibits high mobility of 5.35 cm2 V−1 s−1 and on/off ratio of >104 along with stable and uniform results of the transistor array device, which consists of 50 devices. The optical properties show highly linear photodetection behavior in terms of threshold voltage shift, responsivity, sensitivity, photocurrent, detectivity, and time-domain behavior. Also, the various stability tests are performed to confirm the consistency of the device in terms of positive bias stress, negative bias stress, positive bias illumination stress, long-term stability response (up to 60 days), mechanical bending stress, and the results reveal a constant and consistent behavior of the device, which can be attributed to enable wide range applications in the field of electronics devices.
KW - bias stress
KW - FET
KW - hybrid structure
KW - phototransistor
KW - scalable devices
KW - tellurium
KW - tellurium-nanowires
UR - http://www.scopus.com/inward/record.url?scp=85125094886&partnerID=8YFLogxK
U2 - 10.1002/aelm.202101331
DO - 10.1002/aelm.202101331
M3 - Article
AN - SCOPUS:85125094886
SN - 2199-160X
VL - 8
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 7
M1 - 2101331
ER -