@inproceedings{9035f3d996a34c3d8b3916cf4b0f307f,
title = "Fluorine doped zinc oxynitride thin film transistors fabricated by RF reactive co-sputtering",
abstract = "In this work, an alternative type of high mobility semiconductor, zinc oxynitride (ZnON), is studied by both theoretical calculations and experimental evaluation of thin films and TFT devices. It is demonstrated that the addition of fluorine, in ZnON, removes the formation of nitrogen vacancies, and significantly improves electrical characteristics of the ZnON TFT.",
author = "Kim, {Hyoung Do} and Kim, {Jong Heon} and Yang, {Dae Gyu} and Kim, {Hyun Suk}",
year = "2017",
month = aug,
day = "8",
language = "English",
series = "AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "163--164",
booktitle = "AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices",
address = "United States",
note = "24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 ; Conference date: 04-07-2017 Through 07-07-2017",
}