Fluorine doped zinc oxynitride thin film transistors fabricated by RF reactive co-sputtering

Hyoung Do Kim, Jong Heon Kim, Dae Gyu Yang, Hyun Suk Kim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, an alternative type of high mobility semiconductor, zinc oxynitride (ZnON), is studied by both theoretical calculations and experimental evaluation of thin films and TFT devices. It is demonstrated that the addition of fluorine, in ZnON, removes the formation of nitrogen vacancies, and significantly improves electrical characteristics of the ZnON TFT.

Original languageEnglish
Title of host publicationAM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages163-164
Number of pages2
ISBN (Electronic)9784990875336
StatePublished - 8 Aug 2017
Event24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 - Kyoto, Japan
Duration: 4 Jul 20177 Jul 2017

Publication series

NameAM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Conference

Conference24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017
Country/TerritoryJapan
CityKyoto
Period4/07/177/07/17

Fingerprint

Dive into the research topics of 'Fluorine doped zinc oxynitride thin film transistors fabricated by RF reactive co-sputtering'. Together they form a unique fingerprint.

Cite this