TY - JOUR
T1 - Formation and characterization of room temperature ferromagnetic As-doped p-type (Zn0.93Mn0.07)O layer
AU - Lee, Sejoon
AU - Lee, Seung Woong
AU - Shon, Yoon
AU - Kim, Deuk Young
PY - 2007/2/25
Y1 - 2007/2/25
N2 - The As-doped (Zn0.93Mn0.07)O layer, formed by As+ ion implantation and subsequent annealing at 900 °C for 30 s, showed a clear peak from (Ao,X) emission. The sample exhibited the positive charge polarity indicative of p-type conductivity in the rectification measurement. The hole concentration and the hole mobility were determined to be 2.6 × 1018 cm-3 and of 13.1 cm2 V-1 s-1, from Hall effect measurements, respectively. The sample showing the stable p-type conductivity revealed high-TC ferromagnetism persisting up to ∼320 K. At 300 K, the periodic magnetic domain was clearly observed along the in-plane direction but not dependent on the surface morphology. The observed room temperature ferromagnetism is expected to originate from the increase of hole-mediated exchange interactions.
AB - The As-doped (Zn0.93Mn0.07)O layer, formed by As+ ion implantation and subsequent annealing at 900 °C for 30 s, showed a clear peak from (Ao,X) emission. The sample exhibited the positive charge polarity indicative of p-type conductivity in the rectification measurement. The hole concentration and the hole mobility were determined to be 2.6 × 1018 cm-3 and of 13.1 cm2 V-1 s-1, from Hall effect measurements, respectively. The sample showing the stable p-type conductivity revealed high-TC ferromagnetism persisting up to ∼320 K. At 300 K, the periodic magnetic domain was clearly observed along the in-plane direction but not dependent on the surface morphology. The observed room temperature ferromagnetism is expected to originate from the increase of hole-mediated exchange interactions.
KW - As-doped ZnMnO
KW - Diluted magnetic semiconductor
KW - Hole-mediated ferromagnetism
UR - http://www.scopus.com/inward/record.url?scp=33846808947&partnerID=8YFLogxK
U2 - 10.1016/j.mseb.2006.10.007
DO - 10.1016/j.mseb.2006.10.007
M3 - Article
AN - SCOPUS:33846808947
SN - 0921-5107
VL - 137
SP - 40
EP - 44
JO - Materials Science and Engineering: B
JF - Materials Science and Engineering: B
IS - 1-3
ER -