Formation and characterization of room temperature ferromagnetic As-doped p-type (Zn0.93Mn0.07)O layer

Sejoon Lee; Seung Woong Lee; Yoon Shon; Deuk Young Kim

doi:10.1016/j.mseb.2006.10.007

Formation and characterization of room temperature ferromagnetic As-doped p-type (Zn_0.93Mn_0.07)O layer

Sejoon Lee
, Seung Woong Lee
, Yoon Shon
, Deuk Young Kim

Division of System Semiconductor

Dongguk University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The As-doped (Zn_0.93Mn_0.07)O layer, formed by As⁺ ion implantation and subsequent annealing at 900 °C for 30 s, showed a clear peak from (A^o,X) emission. The sample exhibited the positive charge polarity indicative of p-type conductivity in the rectification measurement. The hole concentration and the hole mobility were determined to be 2.6 × 10¹⁸ cm^-3 and of 13.1 cm² V^-1 s^-1, from Hall effect measurements, respectively. The sample showing the stable p-type conductivity revealed high-T_C ferromagnetism persisting up to ∼320 K. At 300 K, the periodic magnetic domain was clearly observed along the in-plane direction but not dependent on the surface morphology. The observed room temperature ferromagnetism is expected to originate from the increase of hole-mediated exchange interactions.

Original language	English
Pages (from-to)	40-44
Number of pages	5
Journal	Materials Science and Engineering: B
Volume	137
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2006.10.007
State	Published - 25 Feb 2007

Keywords

As-doped ZnMnO
Diluted magnetic semiconductor
Hole-mediated ferromagnetism

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10.1016/j.mseb.2006.10.007

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title = "Formation and characterization of room temperature ferromagnetic As-doped p-type (Zn0.93Mn0.07)O layer",

abstract = "The As-doped (Zn0.93Mn0.07)O layer, formed by As+ ion implantation and subsequent annealing at 900 °C for 30 s, showed a clear peak from (Ao,X) emission. The sample exhibited the positive charge polarity indicative of p-type conductivity in the rectification measurement. The hole concentration and the hole mobility were determined to be 2.6 × 1018 cm-3 and of 13.1 cm2 V-1 s-1, from Hall effect measurements, respectively. The sample showing the stable p-type conductivity revealed high-TC ferromagnetism persisting up to ∼320 K. At 300 K, the periodic magnetic domain was clearly observed along the in-plane direction but not dependent on the surface morphology. The observed room temperature ferromagnetism is expected to originate from the increase of hole-mediated exchange interactions.",

keywords = "As-doped ZnMnO, Diluted magnetic semiconductor, Hole-mediated ferromagnetism",

author = "Sejoon Lee and Lee, \{Seung Woong\} and Yoon Shon and Kim, \{Deuk Young\}",

year = "2007",

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doi = "10.1016/j.mseb.2006.10.007",

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journal = "Materials Science and Engineering: B",

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TY - JOUR

T1 - Formation and characterization of room temperature ferromagnetic As-doped p-type (Zn0.93Mn0.07)O layer

AU - Lee, Sejoon

AU - Lee, Seung Woong

AU - Shon, Yoon

AU - Kim, Deuk Young

PY - 2007/2/25

Y1 - 2007/2/25

N2 - The As-doped (Zn0.93Mn0.07)O layer, formed by As+ ion implantation and subsequent annealing at 900 °C for 30 s, showed a clear peak from (Ao,X) emission. The sample exhibited the positive charge polarity indicative of p-type conductivity in the rectification measurement. The hole concentration and the hole mobility were determined to be 2.6 × 1018 cm-3 and of 13.1 cm2 V-1 s-1, from Hall effect measurements, respectively. The sample showing the stable p-type conductivity revealed high-TC ferromagnetism persisting up to ∼320 K. At 300 K, the periodic magnetic domain was clearly observed along the in-plane direction but not dependent on the surface morphology. The observed room temperature ferromagnetism is expected to originate from the increase of hole-mediated exchange interactions.

AB - The As-doped (Zn0.93Mn0.07)O layer, formed by As+ ion implantation and subsequent annealing at 900 °C for 30 s, showed a clear peak from (Ao,X) emission. The sample exhibited the positive charge polarity indicative of p-type conductivity in the rectification measurement. The hole concentration and the hole mobility were determined to be 2.6 × 1018 cm-3 and of 13.1 cm2 V-1 s-1, from Hall effect measurements, respectively. The sample showing the stable p-type conductivity revealed high-TC ferromagnetism persisting up to ∼320 K. At 300 K, the periodic magnetic domain was clearly observed along the in-plane direction but not dependent on the surface morphology. The observed room temperature ferromagnetism is expected to originate from the increase of hole-mediated exchange interactions.

KW - As-doped ZnMnO

KW - Diluted magnetic semiconductor

KW - Hole-mediated ferromagnetism

UR - https://www.scopus.com/pages/publications/33846808947

U2 - 10.1016/j.mseb.2006.10.007

DO - 10.1016/j.mseb.2006.10.007

M3 - Article

AN - SCOPUS:33846808947

SN - 0921-5107

VL - 137

SP - 40

EP - 44

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 1-3

ER -

Formation and characterization of room temperature ferromagnetic As-doped p-type (Zn_0.93Mn_0.07)O layer

Abstract

Keywords

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