Abstract
(Zn1-xMnx)O diluted magnetic semiconductors (DMSs) grown on (0001) Al2O3 substrates by radio frequency magnetron sputtering were investigated with the aim of producing a material with a high ferromagnetic transition temperature (Tc). X-ray diffraction, photoluminescence, and Hall-effect measurements showed that the grown (Zn1-xMnx)O thin films were p-type crystalline semiconductors with single phases. Magnetization curve as a function of magnetic field at 5K indicated that ferromagnetism existed in the (Zn 1-xMnx)O thin films, and magnetization curve as a function of temperature showed that the Tc of the (Zn 0.93Mn30.07)O thin film was 70K. These observations can improve the understanding of the increase in Tc for (Zn 1-xMnxO DMSs grown on (0001) Al2O3 substrates.
Original language | English |
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Pages (from-to) | 7217-7220 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 42 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2003 |
Keywords
- (ZnMn)O
- Diluted magnetic semiconductors
- Ferromagnetic transition temperature
- Ferromagnetism
- Magnetron sputtering