Formation mechanism of ferromagnetism in Si1-xMnx diluted magnetic semiconductors

Y. H. Kwon; T. W. Kang; H. Y. Cho; T. W. Kim

doi:10.1016/j.ssc.2005.08.011

Formation mechanism of ferromagnetism in Si_1-xMn_x diluted magnetic semiconductors

Y. H. Kwon
, T. W. Kang
, H. Y. Cho
, T. W. Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Si_1-xMn_x diluted magnetic semiconductor (DMS) bulks were formed by using an implantation and annealing method. Energy dispersive X-ray fluorescence, transmission electron microscopy (TEM), and double-crystal rocking X-ray diffraction (DCRXD) measurements showed that the grown materials were Si_1-xMn_x crystalline bulks. Hall effect measurements showed that annealed Si_1-xMn_x bulks were p-type semiconductors. The magnetization curve as a function of the magnetic field clearly showed that the ferromagnetism in the annealed Si_1-xMn _x bulks originated from the interaction between interstitial and substitutional Mn⁺ ions, which was confirmed by the DCRXD measurements. The magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature was approximately 75 K. The present results can help to improve understanding of the formation mechanism of ferromagnetism in Si_1-xMn_x DMS bulks.

Original language	English
Pages (from-to)	257-261
Number of pages	5
Journal	Solid State Communications
Volume	136
Issue number	5
DOIs	https://doi.org/10.1016/j.ssc.2005.08.011
State	Published - Nov 2005

Keywords

A. Semiconductors
C. Impurities in semiconductors

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10.1016/j.ssc.2005.08.011

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title = "Formation mechanism of ferromagnetism in Si1-xMnx diluted magnetic semiconductors",

abstract = "Si1-xMnx diluted magnetic semiconductor (DMS) bulks were formed by using an implantation and annealing method. Energy dispersive X-ray fluorescence, transmission electron microscopy (TEM), and double-crystal rocking X-ray diffraction (DCRXD) measurements showed that the grown materials were Si1-xMnx crystalline bulks. Hall effect measurements showed that annealed Si1-xMnx bulks were p-type semiconductors. The magnetization curve as a function of the magnetic field clearly showed that the ferromagnetism in the annealed Si1-xMn x bulks originated from the interaction between interstitial and substitutional Mn+ ions, which was confirmed by the DCRXD measurements. The magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature was approximately 75 K. The present results can help to improve understanding of the formation mechanism of ferromagnetism in Si1-xMnx DMS bulks.",

keywords = "A. Semiconductors, C. Impurities in semiconductors",

author = "Kwon, \{Y. H.\} and Kang, \{T. W.\} and Cho, \{H. Y.\} and Kim, \{T. W.\}",

year = "2005",

month = nov,

doi = "10.1016/j.ssc.2005.08.011",

language = "English",

volume = "136",

pages = "257--261",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

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TY - JOUR

T1 - Formation mechanism of ferromagnetism in Si1-xMnx diluted magnetic semiconductors

AU - Kwon, Y. H.

AU - Kang, T. W.

AU - Cho, H. Y.

AU - Kim, T. W.

PY - 2005/11

Y1 - 2005/11

N2 - Si1-xMnx diluted magnetic semiconductor (DMS) bulks were formed by using an implantation and annealing method. Energy dispersive X-ray fluorescence, transmission electron microscopy (TEM), and double-crystal rocking X-ray diffraction (DCRXD) measurements showed that the grown materials were Si1-xMnx crystalline bulks. Hall effect measurements showed that annealed Si1-xMnx bulks were p-type semiconductors. The magnetization curve as a function of the magnetic field clearly showed that the ferromagnetism in the annealed Si1-xMn x bulks originated from the interaction between interstitial and substitutional Mn+ ions, which was confirmed by the DCRXD measurements. The magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature was approximately 75 K. The present results can help to improve understanding of the formation mechanism of ferromagnetism in Si1-xMnx DMS bulks.

AB - Si1-xMnx diluted magnetic semiconductor (DMS) bulks were formed by using an implantation and annealing method. Energy dispersive X-ray fluorescence, transmission electron microscopy (TEM), and double-crystal rocking X-ray diffraction (DCRXD) measurements showed that the grown materials were Si1-xMnx crystalline bulks. Hall effect measurements showed that annealed Si1-xMnx bulks were p-type semiconductors. The magnetization curve as a function of the magnetic field clearly showed that the ferromagnetism in the annealed Si1-xMn x bulks originated from the interaction between interstitial and substitutional Mn+ ions, which was confirmed by the DCRXD measurements. The magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature was approximately 75 K. The present results can help to improve understanding of the formation mechanism of ferromagnetism in Si1-xMnx DMS bulks.

KW - A. Semiconductors

KW - C. Impurities in semiconductors

UR - https://www.scopus.com/pages/publications/25444507734

U2 - 10.1016/j.ssc.2005.08.011

DO - 10.1016/j.ssc.2005.08.011

M3 - Article

AN - SCOPUS:25444507734

SN - 0038-1098

VL - 136

SP - 257

EP - 261

JO - Solid State Communications

JF - Solid State Communications

IS - 5

ER -

Formation mechanism of ferromagnetism in Si_1-xMn_x diluted magnetic semiconductors

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Keywords

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