Abstract
The effects of the insertion of Au nanodots (4-10 nm in diameter) at the Ni/GaN interface on the electrical properties of Ni/Au ohmic contacts to p-type GaN have been investigated. As-deposited Ni/Au contacts with Au nanodots show better electrical behavior than contacts without Au nanodots. Nanodot contacts produce a specific contact resistance of 8.4 × 10-4 Ω cm2. The multiquantum-well light-emitting diodes (LEDs) are fabricated with the nanodot Ni/Au contact layers. Nanodot LEDs show a lower operating voltage compared with LEDs made with a conventional Ni/Au contact layer.
Original language | English |
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Pages (from-to) | G179-G181 |
Journal | Electrochemical and Solid-State Letters |
Volume | 7 |
Issue number | 9 |
DOIs | |
State | Published - 2004 |