Formation of Si nanocrystals utilizing a Au nanoscale island etching mask

Y. M. Kang; S. J. Lee; D. Y. Kim; T. W. Kim; Y. D. Woo; K. L. Wang

doi:10.1016/j.materresbull.2004.06.019

Formation of Si nanocrystals utilizing a Au nanoscale island etching mask

Y. M. Kang, S. J. Lee, D. Y. Kim, T. W. Kim, Y. D. Woo, K. L. Wang

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Si nanocrystals were formed by using a Au nanoscale island etching mask. A high-resolution transmission electron microscopy image showed that the Si nanocrystals were created on a SiO_x layer, and the luminescence peak related to Si nanocrystals was observed in the cathodoluminescence spectrum. Capacitance-voltage measurements demonstrate a metal-insulator-semiconductor behavior with a flatband voltage shift for the Al/ SiO ₂/nanocrystalline Si/SiO₂/p-Si structures, indicative of the existence of the Si nanocrystals embedded into the SiO_x layer. These results indicate that Si nanocrystals embedded into the SiO_x layer can be formed by using a Au island etching mask.

Original language	English
Pages (from-to)	193-198
Number of pages	6
Journal	Materials Research Bulletin
Volume	40
Issue number	1
DOIs	https://doi.org/10.1016/j.materresbull.2004.06.019
State	Published - 4 Jan 2005

Keywords

A. Semiconductors
B. Chemical synthesis
D. Optical properties

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10.1016/j.materresbull.2004.06.019

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title = "Formation of Si nanocrystals utilizing a Au nanoscale island etching mask",

abstract = "Si nanocrystals were formed by using a Au nanoscale island etching mask. A high-resolution transmission electron microscopy image showed that the Si nanocrystals were created on a SiOx layer, and the luminescence peak related to Si nanocrystals was observed in the cathodoluminescence spectrum. Capacitance-voltage measurements demonstrate a metal-insulator-semiconductor behavior with a flatband voltage shift for the Al/ SiO 2/nanocrystalline Si/SiO2/p-Si structures, indicative of the existence of the Si nanocrystals embedded into the SiOx layer. These results indicate that Si nanocrystals embedded into the SiOx layer can be formed by using a Au island etching mask.",

keywords = "A. Semiconductors, B. Chemical synthesis, D. Optical properties",

author = "Kang, {Y. M.} and Lee, {S. J.} and Kim, {D. Y.} and Kim, {T. W.} and Woo, {Y. D.} and Wang, {K. L.}",

year = "2005",

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doi = "10.1016/j.materresbull.2004.06.019",

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T1 - Formation of Si nanocrystals utilizing a Au nanoscale island etching mask

AU - Kang, Y. M.

AU - Lee, S. J.

AU - Kim, D. Y.

AU - Kim, T. W.

AU - Woo, Y. D.

AU - Wang, K. L.

PY - 2005/1/4

Y1 - 2005/1/4

N2 - Si nanocrystals were formed by using a Au nanoscale island etching mask. A high-resolution transmission electron microscopy image showed that the Si nanocrystals were created on a SiOx layer, and the luminescence peak related to Si nanocrystals was observed in the cathodoluminescence spectrum. Capacitance-voltage measurements demonstrate a metal-insulator-semiconductor behavior with a flatband voltage shift for the Al/ SiO 2/nanocrystalline Si/SiO2/p-Si structures, indicative of the existence of the Si nanocrystals embedded into the SiOx layer. These results indicate that Si nanocrystals embedded into the SiOx layer can be formed by using a Au island etching mask.

AB - Si nanocrystals were formed by using a Au nanoscale island etching mask. A high-resolution transmission electron microscopy image showed that the Si nanocrystals were created on a SiOx layer, and the luminescence peak related to Si nanocrystals was observed in the cathodoluminescence spectrum. Capacitance-voltage measurements demonstrate a metal-insulator-semiconductor behavior with a flatband voltage shift for the Al/ SiO 2/nanocrystalline Si/SiO2/p-Si structures, indicative of the existence of the Si nanocrystals embedded into the SiOx layer. These results indicate that Si nanocrystals embedded into the SiOx layer can be formed by using a Au island etching mask.

KW - A. Semiconductors

KW - B. Chemical synthesis

KW - D. Optical properties

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DO - 10.1016/j.materresbull.2004.06.019

M3 - Article

AN - SCOPUS:10444267255

SN - 0025-5408

VL - 40

SP - 193

EP - 198

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 1

ER -

Formation of Si nanocrystals utilizing a Au nanoscale island etching mask

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