Formation of the ferromagnetic semiconductor InMnP:Zn through low-temperature annealing by using Mn/InP:Zn bilayer

The ferromagnetic semiconductor p-InMnP:Zn epilayers were prepared through low-temperature annealing at 250 °C by using Mn/InP:Zn bilayers. The p-type InP:Zn epilayers were prepared by using metal-organic chemical vapor deposition. Then, ultra-thin Mn layers were subsequently deposited onto the layers by using molecular beam epitaxy. The Mn/InP:Zn bilayers were annealed at a low temperature of 250 °C in order to minimize the formation of precipitates such as InMn, MnP, Mn ₂P, and Mn ₃In. No ferromagnetic precipitates were observed in the annealed InMnP:Zn; however, the sample exhibited an antiferromagnetic phase of MnO ₂ that might have been formed because of an unavoidable surface oxide that had been created during the sample transfer. Despite the existence of antiferromagnetic MnO ₂, the samples revealed clear ferromagnetic hysteresis loops and showed high ferromagnetic transition temperatures up to ~180 K. The results suggest that a ferromagnetic semiconductor InMnP:Zn can be effectively formed through low-temperature annealing by using a Mn/InP:Zn bilayer.